Exploratory phase stabilization in heteroepitaxial gallium oxide films by pulsed laser deposition

被引：18

作者：

Zhang, Jianguo ^{[1
,2
]}

Wang, Wei ^{[1
]}

Wu, Simiao ^{[1
]}

Geng, Zhiming ^{[3
]}

Zhang, Jinfu ^{[1
]}

Chen, Li ^{[1
]}

Liu, Ningtao ^{[1
]}

Yan, Xuejun ^{[3
]}

Zhang, Wenrui ^{[1
,2
]}

Ye, Jichun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Engn Res Ctr Energy Optoelect Mat &, Ningbo 315201, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 935卷

基金：

中国国家自然科学基金;

关键词：

Gallium oxide; Thin films; Pulsed laser deposition; Phase transition; Thermal conductivity; BETA-GA2O3; THIN-FILMS; GROWTH TEMPERATURE; OPTICAL-PROPERTIES;

D O I：

10.1016/j.jallcom.2022.168123

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium oxide (Ga2O3) is featured by various types of polymorphs that exhibit distinct properties for a broad range of applications. Selective stabilization of distinct Ga2O3 polymorphs is highly desired, but is usually limited by impurity phase formation. Here we report the controlled growth of metastable gallium oxide films by pulsed laser deposition (PLD), and explore a comprehensive phase evolution picture tuned by key synthesis parameters, substrate orientations, and extrinsic tin (Sn) dopants. We demonstrate the stabili-zation of both undoped and Sn-doped alpha-Ga2O3 films by selecting a-plane sapphire substrates, and find that Sn dopants can largely broaden the growth window of alpha-Ga2O3. Besides, Sn-doped epsilon-Ga2O3 is more favored than beta-Ga2O3 to be stabilized on c-plane substrates, and the oxygen pressure is the critical factor to dictate the epsilon-Ga2O3 formation. The structural impact on the thermal transport among these metastable Ga2O3 films is investigated, which shows a maximum value of 5.66 Wm-11-1 in alpha-Ga2O3 and a minimum value of 1.04 Wm-11-1 in amorphous Ga2O3. The native defects of these phases are sensitive to the Sn doping, which exhibits distinct response for deep ultraviolet photodetection. This study establishes a synthesis guideline of metastable Ga2O3 polymorphs by PLD and provides insights into selective phase stabilization of tran-sition metal oxides with various crystal phases. (c) 2022 Elsevier B.V. All rights reserved.

引用

页数：8

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