ZnO/Ti3C2 composite with oxygen vacancies and Schottky barrier for effective detection of ppb-level NO2 at room temperature

被引:27
作者
Liu, Siwei [1 ]
Wang, Mingyuan [2 ]
Ge, Chuanxin [1 ]
Zhang, Xiangzhao [1 ]
Lei, Shuangying [2 ]
Hussain, Shahid [1 ]
Wang, Mingsong [1 ]
Qiao, Guanjun [1 ]
Liu, Guiwu [1 ]
机构
[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
[2] Southeast Univ, FEI Nanop Ctr, Sch Elect Sci & Engn, Key Lab MEMS,Minist Educ, Nanjing 210096, Peoples R China
基金
中国国家自然科学基金;
关键词
Ti; 3; C; 2; MXene; ZnO; Oxygen vacancy; Schottky barrier; GAS SENSOR; SENSING PERFORMANCE; ZNO NANOPARTICLES; NANOWIRES; GROWTH; NANOSTRUCTURES; TI3C2TX;
D O I
10.1016/j.apsusc.2022.155440
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Room-temperature detection of low concentrations of toxic and harmful gases is of great significance for the health and life of human being and contributes to long-term stability and low power consumption of gas sensors. In this work, we firstly prepared a ZnO1-x/Ti3C2 composite with rich oxygen vacancies by a hydrothermal process and subsequent annealing in hydrogen atmosphere. The experimental results reveal that the ZnO1-x/Ti3C2 composite exhibits very high responses (Delta R/Ra) of 0.03, 0.21 and 2.28 to 0.01, 1 and 10 ppm NO2 at room temperature, among which the response to 10 ppm NO2 is 2.3 and 14.2 times higher than those of ZnO/Ti3C2 composite and pristine Ti3C2, respectively. Moreover, the ZnO1-x/Ti3C2 composite presents good linear response (R2 = 0.99509), reproducibility and long-term stability to NO2. The outstanding NO2 sensing properties of ZnO1-x/Ti3C2 composite are mainly attributed to the presence of abundant oxygen vacancies and the formation of ZnO1-x/Ti3C2 Schottky barrier. Both the gas responses and calculated adsorption energies of ZnO1-x/Ti3C2 and ZnO/Ti3C2 composites to NO2, NH3, CO, HCHO and acetone demonstrate the high selectivity of the ZnO1-x/Ti3C2 composite to NO2. This work provides a new perspective on enhancing the room-temperature gas sensitivity of MOS-containing composites by constructing oxygen vacancies and heterojunction.
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页数:10
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