Analog resistive switching behavior in BiCoO3 thin film

In this work, resistive switching behaviour of BiCoO3 (BCO) thin film has been reported. The BCO thin film was grown on ITO coated corning glass substrate using pulsed laser deposition (PLD) technique at a substrate temperature of 550 & ring;C in the presence of oxygen ambient pressure of 200 mT. The Al/BCO/ITO device was found to exhibit analog bipolar resistive switching behaviour, as no electroforming was needed in this study. The device was found to be compliance free. The current voltage characteristics was studied and found it follows Ohmic and SCLC conduction mechanism in LRS mode and Ohmic, SCLC and Schottky emission conductions in HRS mode for both positive and negative cycles respectively. The endurance test of the Al/BCO/ITO device was performed to study the switching capability of the fabricated device upto 103 cycles and found stable. Retention characteristics were also studied and found stable over a period of time > 103 s. The device active area dependent studies was included and found that the device shows interface type RS for both LRS and HRS mode at 0.5 V and-0.5 V the resistance was found to be decreasing on increasing device active area. A conduction model was included to justify the interfacial conduction in the present device. Thus, non-volatile nature and stablility of the present Al/ BCO/ITO RRAM device makes it a potential candidate to future analog RRAM devices.