Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

被引:12
作者
Kaloyeros, Alain E. [1 ]
Arkles, Barry [1 ,2 ]
机构
[1] Kalark Nanostruct Sci Inc, Doylestown, PA 18902 USA
[2] Temple Univ, Chem Dept, Philadelphia, PA 19122 USA
关键词
MECHANICAL-PROPERTIES; LUMINESCENCE; DEPOSITION; EMISSION; DEFECTS; GROWTH;
D O I
10.1149/2162-8777/acf8f5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In Part I of a two-part report, we provide a detailed and systematic review of the latest progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing on chemical vapor deposition (CVD) thin film technologies. To this end, up-to-date results from both incremental developments in traditional SiC applications as well major advances in novel SiC usages are summarized. Emphasis is placed on new chemical sources for Si and C, particularly in the form of single source SiC precursors as well as emerging molecular and atomic scale deposition techniques, with special attention to their effects on resulting film properties and performance. The review also covers relevant research and development efforts as well as their potential impact on and role in the introduction of new technological applications. Part II will focus on findings for physical vapor deposition (PVD) as well as other deposition techniques.
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页数:23
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