Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS

被引：4

作者：

Chen, Guo ^{[1
,2
]}

Zhang, Zilong ^{[2
]}

Koide, Yasuo ^{[3
]}

Koizumi, Satoshi ^{[2
]}

Huang, Zhaohui ^{[1
]}

Liao, Meiyong ^{[2
]}

机构：

[1] China Univ Geosci, Sch Mat Sci & Technol, Engn Res Ctr, Minist Educ Geol Carbon Storage & Low Carbon Utili, Beijing 100083, Peoples R China

[2] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Ultrawide Bandgap Semicond Grp, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Next Generat Semicond Grp, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan

来源：

关键词：

Single-crystal diamond; MEMS; Quality factor; High-temperature annealing; FILM;

D O I：

10.1016/j.diamond.2023.110240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystal diamond presents as an ideal semiconductor material for high-performance and high-reliability MEMS devices, on account of its outstanding mechanical and physical properties. A smart-cut technology based on ion-implantation was proposed to fabricate the SCD-on-SCD MEMS resonators. However, the ionimplantation damage induced defects would degrade the quality (Q) factors of the diamond MEMS resonators. Here, we systematically investigate the effect of ultra-high vacuum annealing on the resonance properties of SCD cantilevers. It is observed that the Q factors are markedly improved by nearly twice after annealing at 1100 degrees C due to the annihilation of the ion implantation induced damage in the resonators. Therefore, reducing the defects in the resonators by high-temperature annealing the as-fabricated SCD MEMS cantilevers is one of the strategies to improve the Q factors. This work also proves out that MEMS represents a more sensitive tool for characterizing the crystalline quality of diamond, compared with the conventional structural methods.

引用

页数：10

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