Ultrahigh energy density and efficiency of BaTiO3-based ceramics via multiple design strategies

被引：23

作者：

Chen, Xiqi ^{[1
]}

Wang, Mingkun ^{[4
]}

Pan, Zhongbin ^{[1
]}

Li, Huanhuan ^{[1
]}

Zhao, Jinghao ^{[1
]}

Tang, Luomeng ^{[1
]}

Liu, Jinjun ^{[1
]}

Li, Peng ^{[2
]}

Xie, Hongzhen ^{[1
]}

Zhai, Jiwei ^{[3
]}

机构：

[1] Ningbo Univ, Sch Mat Sci & Chem Engn, Ningbo 315211, Zhejiang, Peoples R China

[2] Liaocheng Univ, Sch Mat Sci & Engn, Liaocheng 252059, Shandong, Peoples R China

[3] Tongji Univ, Sch Mat Sci & Engn, 4800 Caoan Rd, Shanghai 201804, Peoples R China

[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China

来源：

CHEMICAL ENGINEERING JOURNAL | 2023年 / 467卷

基金：

中国国家自然科学基金;

关键词：

Capacitors; Energy density; Efficiency; High-temperature; BaTiO3; RELAXOR-FERROELECTRIC CERAMICS; LEAD-FREE CERAMICS; STORAGE DENSITY; CAPACITORS;

D O I：

10.1016/j.cej.2023.143395

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The market-dominating of electrostatic capacitors of BaTiO3 are essential in advanced power supply system due to their quickly store and release electrical energy. However, the relatively low energy storage capability im-pedes miniaturization and integration in present-day electronics. In this study, we investigate the addition of (Sr0.7Bi0.2)(Mg1/3Ta2/3)O3 (SBMT) as a dopant into 0.75BaTiO3-0.25Na0.5Bi0.5TiO3 (BT-NBT) to form a solid solution. SBMT effectively improve the relaxation behavior and insulation performance of the ceramic, increases the breakdown strength (Eb) and reducing hysteresis loss, this leads to a synergistic improvement in the energy storage density (Wrec) and efficiency (eta). The best performing composition was found to be 0.80(BT-NBT)-0.20SBMT, which produced a combination of Eb-720 kV/cm, Wrec-7.12 J/cm3, and eta-90%, These values are superior to those of BaTiO3 and other BaTiO3-based ferroelectric ceramics. Additionally, this composition exhibits almost fatigue-free Wrec after 104 switching cycles, even at elevated temperatures of up to 200 degrees C. These exceptional capabilities demonstrate significant potential for practical device applications.

引用

页数：8

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