Numerical Algorithm with Fourth-Order Spatial Accuracy for Solving the Time- Fractional Dual-Phase-Lagging Nanoscale Heat Conduction Equation

被引:3
作者
Ji, Cui-Cui [1 ]
Dai, Weizhong [2 ]
机构
[1] Qingdao Univ, Sch Math & Stat, Qingdao 266071, Peoples R China
[2] Louisiana Tech Univ, Math & Stat, Ruston, LA 71272 USA
来源
NUMERICAL MATHEMATICS-THEORY METHODS AND APPLICATIONS | 2023年 / 16卷 / 02期
基金
中国国家自然科学基金;
关键词
Nanoscale heat transfer; fractional dual-phase-lagging model; finite difference scheme; stability; convergence; JUMP BOUNDARY-CONDITION; TEMPERATURE-JUMP; LAG MODEL; TRANSISTOR; CALCULUS;
D O I
10.4208/nmtma.OA-2022-0050
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
Nanoscale heat transfer cannot be described by the classical Fourier law due to the very small dimension, and therefore, analyzing heat transfer in nanoscale is of crucial importance for the design and operation of nano-devices and the op-timization of thermal processing of nano-materials. Recently, time-fractional dual -phase-lagging (DPL) equations with temperature jump boundary conditions have showed promising for analyzing the heat conduction in nanoscale. This article proposes a numerical algorithm with high spatial accuracy for solving the time -fractional dual-phase-lagging nano-heat conduction equation with temperature jump boundary conditions. To this end, we first develop a fourth-order accurate and un-conditionally stable compact finite difference scheme for solving this time-fractional DPL model. We then present a fast numerical solver based on the divide-and-conquer strategy for the obtained finite difference scheme in order to reduce the huge compu-tational work and storage. Finally, the algorithm is tested by two examples to verify the accuracy of the scheme and computational speed. And we apply the numerical algorithm for predicting the temperature rise in a nano-scale silicon thin film. Nu-merical results confirm that the present difference scheme provides min{2- alpha, 2- beta} order accuracy in time and fourth-order accuracy in space, which coincides with the theoretical analysis. Results indicate that the mentioned time-fractional DPL model could be a tool for investigating the thermal analysis in a simple nanoscale semicon-ductor silicon device by choosing the suitable fractional order of Caputo derivative and the parameters in the model.
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页码:511 / 540
页数:30
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