The Transition of Threshold Voltage Shift of Al2O3 /SiN4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

被引：5

作者：

Lee, Ya-Huan ^{[1
]}

Chang, Kai-Chun ^{[1
]}

Tai, Mao-Chou ^{[2
]}

Wang, Yu-Xuan ^{[3
]}

Lin, Hsin-Ni ^{[1
]}

Yeh, Yu-Hsuan ^{[1
]}

Kuo, Hung-Ming ^{[1
]}

Tsai, Xin-Ying ^{[4
]}

Lee, Jason ^{[5
]}

Huang, I-Yu ^{[6
]}

Chang, Ting-Chang ^{[1
,7
]}

Sze, Simon ^{[8
,9
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[4] Natl Yang Ming Chiao Tung Univ, Inst Elect, Dept Mat & Optoelect Sci, Hsinchu 30010, Taiwan

[5] Boston Univ, Dept Comp Sci, Boston, MA 02215 USA

[6] Natl Sun Yat Sen Univ, Coll Semicond & Adv Technol Res, Kaohsiung 80424, Taiwan

[7] Natl Sun Yat Sen Univ, Ctr Crystal Res, Kaohsiung 80424, Taiwan

[8] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[9] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

Logic gates; Degradation; Stress; Temperature measurement; Silicon; Wide band gap semiconductors; Threshold voltage; AC stress; metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs); negative gate bias stress (NGBS); LEAKAGE CURRENT; GAN; TRANSISTORS; MECHANISMS; RELIABILITY; MODEL;

D O I：

10.1109/TED.2024.3351094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the reliability issues are discussed under dc and ac negative gate bias stress (ac-NGBS) in Al2O3 /SiN4 metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). Converse degradation between these two stress conditions is discovered. The holes generated by trap-assisted thermionic field emission (TA-TFE) are trapped into the Al2O3 layer, so that the threshold voltage ( V-th ) decreases under dc negative gate bias stress (dc-NGBS). V-th increases because of the hot electrons injected into the GaN layer, while the device is turned on quickly under ac-NGBS. In addition, the degradation mechanisms under dc-NGBS and ac-NGBS are confirmed by the OFF-state gate and drain leakages, respectively. Silvaco TCAD is used to validate the degradation mechanism under ac-NGBS. Finally, the characteristics of the V-th shift transition from dc to ac NGBS are discussed.

引用

页码：1792 / 1797

页数：6

共 22 条

[21] DC and RF characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors
Maeda, N
Makimura, T
Maruyama, T
Wang, CX
Hiroki, M
Yokoyama, H
Makimoto, T
Kobayashi, T
Enoki, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L646 - L648
[22] Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al2O3/Si3N4 Gate Insulator Under Hot Switching
Wu, Pei-Yu
Tsai, Xin-Ying
Chang, Ting-Chang
Yeh, Yu-Hsuan
Huang, Wei-Chen
Chang, Kai-Chun
Tsai, Tsung-Ming
Huang, Jen-Wei
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (08) : 4218 - 4223

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