Protective Zr-Si-B-N coatings were deposited by magnetron sputtering of the 66%ZrB2 + 26%ZrSi2 + 6%Si + 2% ZrO2 composite target at varied partial pressure of nitrogen. The coatings were studied in terms of structure, optical characteristics, mechanical and tribological properties, cyclic impact and oxidation resistance. All the coatings were characterized by a dense and defect-free structure, without any well-defined columnar elements. The base of the non-reactive Zr-Si-B coatings was the hexagonal ZrB2 phase with the crystallite size of about 20 nm. Nitrogen doping led to grain size reduction and coating amorphization. An increase in the nitrogen concentration leads to the formation of an amorphous phase.-Si(Zr)BN. The high content of nonmetallic bonds ensured the high transmittance (up to 90 %) in the visible and infrared spectral ranges for the coatings characterized by the maximum nitrogen content. Hardness of the coatings deposited in working gas Ar and Ar + 15% N-2 was similar to 20 GPa. When the coatings were deposited in an atmosphere of pure nitrogen, this value was <= 15 GPa. Due to structure modification as well as increasing elastic recovery and elastic strain to failure, nitrogen doping of the coatings contributed to reduction of the friction coefficient and increased wear resistance under sliding friction conditions and cyclic impact loading. High-temperature oxidation resistance and thermal stability of the coatings decreased after nitrogen doping. The Zr-Si-B coating exhibited the highest oxidation resistance and withstood long-term exposure to 1200 degrees C and short-term exposure to 1400 degrees C. The high protective properties were ensured by formation of the silica-based surface protective layer with zirconia crystallites dispersed in it.
机构:
Cent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
Osaka Univ, Joining & Welding Res Inst, Osaka 5600047, JapanCent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
Balasubramanian, Subramanian
Ramadoss, Ananthakumar
论文数: 0引用数: 0
h-index: 0
机构:
Cent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, IndiaCent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
Ramadoss, Ananthakumar
Kobayashi, Akira
论文数: 0引用数: 0
h-index: 0
机构:
Osaka Univ, Joining & Welding Res Inst, Osaka 5600047, JapanCent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
Kobayashi, Akira
Muthirulandi, Jayachandran
论文数: 0引用数: 0
h-index: 0
机构:
Cent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, IndiaCent Electrochem Res Inst, CSIR, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R ChinaXi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R China
Chen, Xiangyang
Ma, Shengli
论文数: 0引用数: 0
h-index: 0
机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R ChinaXi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R China
Ma, Shengli
Xu, Kewei
论文数: 0引用数: 0
h-index: 0
机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R ChinaXi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R China
Xu, Kewei
Chu, Paul K.
论文数: 0引用数: 0
h-index: 0
机构:
City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R ChinaXi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shanxi Province, Peoples R China