The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon

被引:2
|
作者
Salek, A. G. [1 ]
Le, P. Y. [1 ]
Partridge, J. G. [1 ]
Raeber, T. J. [1 ]
Haberl, B. [2 ]
Boehler, R. [2 ]
Murdoch, B. J. [3 ]
Bradby, J. E. [4 ]
Ratcliff, T. [4 ]
Elliman, R. G. [4 ]
McKenzie, D. R. [5 ]
McCulloch, D. G. [1 ]
机构
[1] RMIT Univ, Sch Sci, Phys, Melbourne, Vic, Australia
[2] Oak Ridge Natl Lab, Neutron Scattering Div, Neutron Sci Directorate, Oak Ridge, TN 37831 USA
[3] RMIT Univ, RMIT Microscopy & Microanal Facil, Melbourne, Vic, Australia
[4] Australian Natl Univ, Res Sch Phys, Canberra, Australia
[5] Univ Sydney, Sch Phys, Sydney, NSW, Australia
关键词
DENSITY; FILMS; TRANSPORT;
D O I
10.1063/5.0147494
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have synthesized hydrogenated and deuterated amorphous carbon materials that have a density, 2.7 +/- 0.1 g/cm(3), consistent with almost entirely tetrahedral bonding. In hydrogen-free tetrahedral amorphous carbon, the presence of a minority of sp(2) bonded atoms leads to localized states that could be passivated with hydrogen by analogy with hydrogenated amorphous silicon. Neutron diffraction analysis demonstrated that the local bonding environment is consistent with ab initio models of high density hydrogenated tetrahedral amorphous carbon and with the related tetrahedral molecular structure neopentane. The optical bandgap of our material, 4.5 eV, is close to the bandgap in the density of states determined by scanning tunneling spectroscopy (4.3 eV). This bandgap is considerably larger than that of hydrogen-free tetrahedral amorphous carbon, confirming that passivation of sp(2) associated tail-states has occurred. Both the structural and electronic measurements are consistent with a model in which the tetrahedrally bonded carbon regions are terminated by hydrogen, causing hopping conductivity to dominate.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles
    Park, M
    Camphausen, SM
    Myers, AF
    Barletta, PT
    Sakhrani, V
    Bergman, L
    Nemanich, RJ
    Cuomo, JJ
    MATERIALS LETTERS, 1999, 41 (05) : 229 - 233
  • [42] Ab initio survey of the electronic structure of tetrahedrally bonded phases of silicon
    Malone, Brad D.
    Sau, Jay D.
    Cohen, Marvin L.
    PHYSICAL REVIEW B, 2008, 78 (03)
  • [43] Tunneling states in tetrahedrally bonded amorphous semiconductors
    Dyrting, S
    Fang, HP
    Szeto, KY
    Sheng, P
    EUROPHYSICS LETTERS, 1999, 48 (04): : 403 - 409
  • [44] ELECTRONIC-PROPERTIES OF ION-IMPLANTED HYDROGENATED AMORPHOUS-CARBON
    CURRO, G
    MONDIO, G
    NERI, F
    FOTI, G
    COMPAGNINI, G
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 72 : 89 - 95
  • [45] MICROSTRUCTURE AND ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS
    YACOBI, BG
    VONROEDERN, B
    MAHAN, AH
    JONES, KM
    PHYSICAL REVIEW B, 1985, 31 (12): : 8257 - 8258
  • [46] Photoconductivity and electronic transport in tetrahedral amorphous carbon and hydrogenated tetrahedral amorphous carbon
    Ilie, A
    Conway, NMJ
    Kleinsorge, B
    Robertson, J
    Milne, WI
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5575 - 5582
  • [47] The electronic transport mechanism in amorphous tetrahedrally-coordinated carbon films
    Sullivan, JP
    Friedmann, TA
    Dunn, RG
    Stechel, EB
    Schultz, PA
    Siegal, MP
    Missert, N
    COVALENTLY BONDED DISORDERED THIN-FILM MATERIALS, 1998, 498 : 97 - 102
  • [48] VIBRATIONAL-SPECTRA AND TOPOLOGICAL STRUCTURE OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
    MEEK, PE
    PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 897 - 908
  • [49] The relationship between structure and mechanical properties of hydrogenated amorphous carbon films
    Kahn, M.
    Paskvale, S.
    Cekada, M.
    Schoeberl, T.
    Waldhauser, W.
    Mitterer, C.
    Pelicon, P.
    Brandstaetter, E.
    DIAMOND AND RELATED MATERIALS, 2010, 19 (10) : 1245 - 1248
  • [50] CONDITIONS OF PREPARATION, STRUCTURE, AND PROPERTIES OF HYDROGENATED FILMS OF AMORPHOUS-CARBON
    LIGACHEV, VA
    POPOV, AI
    STUKACH, SN
    SEMICONDUCTORS, 1994, 28 (12) : 1183 - 1188