Sapphire substrates for large-area 2D transition metal dichalcogenides synthesis: A brief review

被引:3
|
作者
Krishna, Swathi [1 ]
Choi, Soo Ho [1 ,2 ]
Kim, Soo Min [3 ]
Kim, Ki Kang [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea
[2] Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea
[3] Sookmyung Womens Univ, Dept Chem, Seoul 14072, South Korea
基金
新加坡国家研究基金会;
关键词
Transition metal dichalcogenides; Chemical vapor deposition; Epitaxial growth; Sapphire; Miscut; Surface engineering; GROWTH; OPTOELECTRONICS; LAYERS; WSE2;
D O I
10.1016/j.cap.2023.11.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional transition metal dichalcogenides (TMDs) have attracted significant attention owing to their unique physical properties, such as strong spin-orbit coupling, giant magnetoresistance, and high carrier mobility. To study their fundamentals and develop high-performance electronic devices, high-quality large-area TMD films are inevitably required. Recently, sapphire substrate has emerged as a promising wafer-scale growth platform for synthesizing TMDs via chemical vapor deposition. In this brief review, we address the synthesis of both polycrystalline and single-crystalline TMDs on c-plane and miscut sapphire substrates. In addition, posttreatment processes are investigated, including H2-treatement and oxidation, to achieve a well-defined surface structure and enhance the reproducibility of single-crystalline TMD synthesis. We conclude by offering a summary and insights into future research directions.
引用
收藏
页码:208 / 213
页数:6
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