Polycrystalline samples of (1-x)K0.5Bi0.5TiO3 - xBaTiO3 [(1-x)KBT - xBT] were synthesized using a solid -state reaction pathway. X-ray diffraction analysis confirmed the presence of a single-phase perovskite structure. To explore relaxation and conduction mechanisms, complex impedance spectroscopy was employed. Reduction in Curie temperature was observed as BT content increased. The grain and grain boundary contributions to relaxation was examined through complex impedance and modulus plots and quantified via fitting experimental data to an equivalent circuit model. Examination of the Complex impedance spectra uncovered the existence of dielectric relaxation characteristic of a non-Debye nature. Furthermore, the activation energy determined suggests commonalities in governing the conduction and relaxation processes in relation to temperature-dependent conductivity and relaxation time. A negative temperature coefficient of resistance behaviour was obtained from the temperature-dependent conductive study. Dielectric spectra revealed that these ceramic capacitors are useful in reduction of signal interference, signal attenuation and impedance matching circuits applications.
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USAWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Xu, Qi
Lanagan, Michael T.
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Penn State Univ, Mat Res Inst, University Pk, PA 16802 USAWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Lanagan, Michael T.
Luo, Wei
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Penn State Univ, Mat Res Inst, University Pk, PA 16802 USAWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Luo, Wei
Zhang, Lin
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Zhang, Lin
Xie, Juan
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Xie, Juan
Hao, Hua
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Hao, Hua
Cao, Minghe
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Cao, Minghe
Yao, Zhonghua
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
Yao, Zhonghua
Liu, Hanxing
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Selvamani, Rachna
Singh, Gurvinderjit
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Singh, Gurvinderjit
Sathe, Vasant
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UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Sathe, Vasant
Tiwari, V. S.
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Tiwari, V. S.
Gupta, P. K.
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Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India