Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

被引：3

作者：

Zhang, Qian ^{[1
,2
]}

You, Nannan ^{[1
]}

Wang, Jiayi ^{[1
]}

Xu, Yang ^{[1
]}

Zhang, Kuo ^{[1
,2
]}

Wang, Shengkai ^{[1
,2
]}

Aldrigo, Martino

Lepadatu, Ana-Maria

Nastase, Florin

Avram, Andrei

机构：

[1] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated Ci, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

NANOMATERIALS | 2024年 / 14卷 / 02期

关键词：

silicon carbide; interface state density; low oxygen partial pressure; temperatures; ToF-SIMS; THRESHOLD-VOLTAGE INSTABILITY; INTERFACE; OXIDE; RELIABILITY; MOSFETS; N2O;

D O I：

10.3390/nano14020192

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Oxygen post annealing is a promising method for improving the quality of the SiC metal oxide semiconductor (MOS) interface without the introduction of foreign atoms. In addition, a low oxygen partial pressure annealing atmosphere would prevent the additional oxidation of SiC, inhibiting the generation of new defects. This work focuses on the effect and mechanism of low oxygen partial pressure annealing at different temperatures (900-1250 degrees C) in the SiO2/SiC stack. N2 was used as a protective gas to achieve the low oxygen partial pressure annealing atmosphere. X-ray photoelectron spectroscopy (XPS) characterization was carried out to confirm that there are no N atoms at or near the interface. Based on the reduction in interface trap density (Dit) and border trap density (Nbt), low oxygen partial pressure annealing is proven to be an effective method in improving the interface quality. Vacuum annealing results and time of flight secondary ion mass spectrometry (ToF-SIMS) results reveal that the oxygen vacancy (V[O]) filling near the interface is the dominant annealing mechanism. The V[O] near the interface is filled more by O2 in the annealing atmosphere with the increase in temperature.

引用

页数：8