Gapless linear dispersion in Bi2Se3 nanoparticles for high-performance broadband photodetectors

被引：3

作者：

Ghods, Soheil ^{[1
,2
,3
]}

Esfandiar, Ali ^{[3
]}

Choi, Jun-Hui ^{[1
,2
]}

Zad, Azam Iraji ^{[3
]}

Josline, Mukkath Joseph ^{[1
,2
]}

Kim, Sein ^{[1
,2
]}

Lee, Jae-Hyun ^{[1
,2
]}

机构：

[1] Ajou Univ, Dept Mat Sci & Engn, Suwon 16499, South Korea

[2] Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea

[3] Sharif Univ Technol, Dept Phys, Tehran 111559161, Iran

来源：

MATERIALS TODAY PHYSICS | 2023年 / 38卷

基金：

新加坡国家研究基金会;

关键词：

Topological insulator; Nanoparticles; Bismuth selenide; Tungsten diselenide; Photodetector; INFRARED PHOTODETECTION; GRAPHENE;

D O I：

10.1016/j.mtphys.2023.101235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Topological insulators have demonstrated novel optoelectronic properties owing to their gapless linear dispersion and robust surface states. In this study, we implemented high-performance broadband photodetectors based on mixed-dimensional heterostructure of the topological insulator Bi2Se3 nanoparticles (NPs) with the semiconductor WSe2. Prominently, the Bi2Se3 NPs/WSe2 structure exhibited photoresponsivity of 22.17 A/W in the visible (Vis) wavelengths, and 5 A/W in the near-infrared (NIR) wavelengths and a fast response time of 40 mu s. In comparison with typical semiconducting PbS NPs/WSe2 structure, we confirmed that the enhancement in the photoresponsivity, response time, and broadband photoresponse of the Bi2Se3 NPs/WSe2 structure can be attributed to the gapless behavior in surface states of topological insulator materials. Numerical simulations also confirmed a dramatic increase in the interfacial electric field by two orders of magnitude, resulting from the surface states in topological insulator NPs. The observed experimental results and the proposed mechanism pave the way for the emergence of efficient optoelectronic devices based on topological insulator materials.

引用

页数：10