Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs

被引：4

作者：

Saha, Niloy Chandra ^{[1
]}

Shiratsuchi, Tomoki ^{[1
]}

Kim, Seong-Woo ^{[2
]}

Koyama, Koji ^{[2
]}

Oishi, Toshiyuki ^{[1
]}

Kasu, Makoto ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Orbray Co Ltd, Tokyo 1238511, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 06期

关键词：

Stress; Diamonds; MOSFET; Logic gates; Stress measurement; Doping; Current measurement; Diamond MOSFET; p-type doping; stable operation; stress effects; POWER-DENSITY; GHZ; FET;

D O I：

10.1109/LED.2023.3265664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the constant gate bias stress characteristics of an Al2O3 layer passivated, NO2 p-type doped diamond metal-oxide-semiconductor field-effect transistor (MOSFET) for a long period of 190 h. The MOSFET exhibited stable operation throughout the period without any degradation in the drain current; rather the drain current gradually increased. Long stress time led to an increase in the gate leakage current, which can be attributed to the charge injection into the Al2O3 layer. Following the withdrawal of the stress, the gate leakage current disappeared as soon as the trapped charges in the Al2O3 layer were released and MOSFET characteristics recovered to their initial states. This study revealed the potential long-period stability and durability of diamond MOSFETs for power circuit applications.

引用

收藏

页码：975 / 978

页数：4

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