Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

被引：0
作者：
Li, Hui-Hsuan [1 ]
Lin, Yu-Hsien [2 ]
Tu, Tsung-Yen [2 ]
Chien, Chao-Hsin [1 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
[2] Natl United Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
Germanium; germanium oxide (GeOx); Ti-GeOx; HfO2; interfacial layer (IL); in situ; plasmaenhanced atomic layer deposition (PEALD); pMOSFET; HFO2-BASED GATE STACK;
D O I：
10.1109/JCS57290.2023.10102932
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we successfully investigated Hfbased gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.
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页数：3
相关论文
共 8 条
  • [1] Black L.E., THESIS, DOI [10.1007/978-3-319-32521-7, DOI 10.1007/978-3-319-32521-7]
  • [2] Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
    Chou, Chen-Han
    Lu, Yu-Hong
    Tsai, Yi-He
    Shih, An-Shih
    Yeh, Wen-Kuan
    Chien, Chao-Hsin
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (02) : N15 - N19
  • [3] Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
    Lee, Choong Hyun
    Tabata, Toshiyuki
    Nishimura, Tomonori
    Nagashio, Kosuke
    Kita, Koji
    Toriumi, Akira
    [J]. APPLIED PHYSICS EXPRESS, 2009, 2 (07)
  • [4] Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition
    Li, Hui-Hsuan
    Tsai, Yi-He
    Lin, Yu-Hsien
    Chien, Chao-Hsin
    [J]. IEEE ELECTRON DEVICE LETTERS, 2021, 42 (08) : 1109 - 1111
  • [5] The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks
    Seo, Yujin
    Lee, Tae In
    Yoon, Chang Mo
    Park, Bo-Eun
    Hwang, Wan Sik
    Kim, Hyungjun
    Yu, Hyun-Yong
    Cho, Byung Jin
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3303 - 3307
  • [6] Shang HL, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P441, DOI 10.1109/IEDM.2002.1175873
  • [7] Sun JB, 2016, 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), P306, DOI 10.1109/ICSICT.2016.7998905
  • [8] Desorption kinetics of GeO from GeO2/Ge structure
    Wang, Sheng Kai
    Kita, Koji
    Lee, Choong Hyun
    Tabata, Toshiyuki
    Nishimura, Tomonori
    Nagashio, Kosuke
    Toriumi, Akira
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (05)
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