Optimization of energy-storage performance of Mn-doped BaZr0.2Ti0.8O3 lead-free ferroelectric thin films by the sol-gel method

被引：8
作者：
Luo, Yutao [1 ,2 ,3 ]
Qiu, Guoxiu [1 ,2 ,3 ]
Wang, Jun [1 ,2 ,3 ]
Liu, Yunfei [1 ,2 ,3 ]
Luo, Jin [1 ,2 ,3 ]
Lyu, Yinong [1 ,2 ,3 ]
机构：
[1] Nanjing Tech Univ, Coll Mat Sci & Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 210009, Peoples R China
[2] Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Peoples R China
[3] Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct C, Nanjing 210009, Peoples R China
来源：
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2023年 / 107卷 / 03期
基金：
中国国家自然科学基金;
关键词：
BaZr0; 2Ti0; 8O3; Sol-gel; Thin films; Energy storage; Dielectric capacitor; DENSITY; CAPACITORS; CERAMICS; TEMPERATURE;
D O I：
10.1007/s10971-023-06150-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Dielectric capacitors have been widely studied for energy storage applications in pulsed power electronic and electrical systems due to their fast charge/discharge rate and high power density. In this work, the lead-free ferroelectric BaZr0.2Ti0.8O3-0.02 MnO2 (BZT-0.02 Mn) thin films are prepared by a sol-gel method on Pt(111)/Ti/SiO2/Si(100) substrates. The crystal structure, surface morphology, ferroelectric properties, leakage behavior, energy storage properties and stability of the films are systematically investigated. The BZT-0.02 Mn thin films exhibit relatively high recoverable energy storage density of 32.3 J/cm(3) and energy storage efficiency of 62% at 3700 kV/cm. In addition, the frequency insensitive stability from 0.1 kHz to 10 kHz, long-term fatigue resistance up to 10(7) switching cycles and high temperature stability in a range of 20 degrees C to 120 degrees C are also achieved. The results show that the BZT-0.02 Mn thin film is a promising lead-free dielectrics for application in energy storage.
引用
收藏
页码：560 / 568
页数：9
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