Ferroelectric domain wall current corresponding to ferroelectric domain structures of BaTiO3 nanodots fabricated by dip-pen nanolithography

被引：5
作者：
Shin, Hyun Wook [1 ]
Son, Jong Yeog [1 ,2 ]
机构：
[1] Kyung Hee Univ, Inst Nat Sci & Integrated Educ, Inst Frontier Sci & Technol, Dept Appl Phys, Yongin 17104, South Korea
[2] V Memory Corp, Heungdeok IT Valley B605,13 Heungdeok 1 Ro, Yongin 16954, Gyeonggi Do, South Korea
来源：
CERAMICS INTERNATIONAL | 2023年 / 49卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
BaTiO3; nanodots; Dip-pen nanolithography; Ferroelectric domain structures; Domain wall conduction; THIN-FILMS; POLARIZATION; CONDUCTION; TITANATE; ARRAYS;
D O I：
10.1016/j.ceramint.2022.09.260
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, we investigated the ferroelectric domain wall current corresponding to the ferroelectric domain structures of BaTiO3 (BTO) nanodots deposited on Nb-doped SrTiO3 substrates using the dip-pen nano -lithography (DPN) method. By controlling the DPN deposition time, the deposited BTO nanodots with a diameter of 60-200 nm were crystallized by heat treatment at 800 degrees C. The ferroelectric domain structures of BTO nanodots were observed through piezoresponse force microscope studies, and the formation of domain walls was observed. Relatively large ferroelectric domain wall currents formed on the ferroelectric domain wall produced by BTO nanodots and currents corresponding to the ferroelectric polarization direction around the domain wall were observed through a conducting atomic force microscope.
引用
收藏
页码：2786 / 2791
页数：6
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