DC Bias Effects on Optimizing ScAlN Air-Coupled pMUT Performance Parameters

被引：6

作者：

Choong, D. S. W. ^{[1
]}

Goh, D. J. ^{[1
]}

Liu, J. ^{[1
]}

Sarafianou, M. ^{[1
]}

Merugu, S. ^{[1
]}

Zhang, Q. X. ^{[1
]}

Chang, P. ^{[1
]}

Leotti, A. ^{[2
]}

Koppisetti, G. ^{[2
]}

Zakiyyan, N. ^{[2
]}

Lin, H. ^{[1
]}

Bhasetti, C. ^{[1
]}

Ghosh, S. ^{[1
]}

Ramegowda, P. C. ^{[1
]}

Chen, D. S. -H. ^{[1
]}

Lee, J. E. -Y. ^{[1
]}

Prelini, C. ^{[3
]}

Giusti, D. ^{[3
]}

Savoia, A. ^{[4
]}

Yul, K. ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore, Singapore

[2] STMicroelectronics, Singapore, Singapore

[3] STMicroelectronics, Milan, Italy

[4] Roma Tre Univ, Rome, Italy

来源：

2023 IEEE SENSORS | 2023年

关键词：

PMUT; ultrasound; DC bias; scandium aluminum nitride; transmit sensitivity; receive sensitivity;

D O I：

10.1109/SENSORS56945.2023.10325160

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

In this work, we demonstrate that the performance of ScAlN pMUTs can be enhanced by adjusting DC bias voltages. DC biases up to 80 V on ScAlN pMUTs contribute to film stress alleviation and enhance pMUT performance. Laser Doppler Vibrometry characterization was performed to evaluate an improvement in displacement transfer according to the DC bias, as well as to investigate the ferroelectric effect of 15% scandium-doped AlN film. As a result, both transmission sensitivity and receive sensitivity are improved by 11% and 50%, respectively, at 80V bias compared to 0V. Additionally, a 55% enlargement in the -3dB bandwidth (BW) has been achieved.

引用

页数：4

共 8 条

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