An 1 V Supply, 740 nW, 8.7 ppm/°C Bandgap Voltage Reference With Segmented Curvature Compensation

被引:7
|
作者
Chi-Wa, U. [1 ,2 ,3 ]
Liu, Cong [1 ,2 ,3 ]
Martins, Rui P. [1 ,2 ,3 ]
Lam, Chi-Seng [1 ,2 ,3 ]
机构
[1] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau 999078, Peoples R China
[2] Univ Macau, Inst Microelect, Macau 999078, Peoples R China
[3] Univ Macau, Fac Sci & Technol, Dept Elect & Comp Engn, Macau 999078, Peoples R China
关键词
Bandgap reference; segmented curvature compensation; temperature coefficient; REFERENCE CIRCUIT;
D O I
10.1109/TCSI.2023.3301736
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a segmented curvature-compensated bandgap voltage reference (BGR) with low temperature coefficient (TC) and power consumption across a wide temperature range. In this work, we achieve temperature segmentation by comparing voltage instead of current, as in the conventional method, significantly reducing power consumption. Furthermore, we examine the trade-off between TC and power consumption, focusing on optimizing the number of temperature segments. In the core circuit, we utilize a regulated cascode current mirror to minimize channel length modulation induced error existing in the current-based BGR topology. We also introduce a replica structure to prevent oscillation and design comparators with the hysteresis characteristic to address noise influence. The proposed BGR, implemented in 65 nm CMOS, occupies an active area of 0.058 mm(2). Measurement results of 6 chips show that the achieved reference voltage of 431.3 mV under 1 V supply has the best TC of 8.7 ppm/degrees C over a temperature range of -40 degrees C to 90 degrees C, consuming 740 nW at 20 degrees C.
引用
收藏
页码:4755 / 4766
页数:12
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