Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

被引：0

作者：

Joshi, Vipin ^{[1
]}

Gupta, Sayak Dutta ^{[1
]}

Chaudhuri, Rajarshi Roy ^{[1
]}

Shrivastava, Mayank ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Elect Syst Engn, Bangalore, Karnataka, India

来源：

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年

关键词：

Cascode HEMTs; Breakdown Voltage; C-doped GaN buffer; C-Si co-doping; C-doped GaN buffer transport; GATE; VOLTAGE;

D O I：

10.1109/IRPS48203.2023.10118195

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through this work, we report a unique reduction in the breakdown voltage of an AlGaN/GaN HEMT device when used in a cascode configuration. Detailed analysis reveals the breakdown voltage of the cascode HEMT to be a strong function of the carrier transport through the C-doped GaN buffer. A GaN buffer doping strategy is also proposed to improve the breakdown performance of the cascode HEMT device.

引用

页数：4

共 9 条

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