Theoretical pursuit of structural, mechanical, magneto-electronic, and thermoelectric features of new inverse full Heusler compounds Rb2ZrZ (Z = C, Si, Ge, and Sn). A first-principles investigation

被引:0
|
作者
Gheriballah, Slimane [1 ]
Benazzouzi, Youssouf [1 ]
Bendjilali, Hadjer [1 ]
Chahed, Abbes [1 ]
Rozale, Habib [1 ]
机构
[1] Univ Djillali Liabes Sidi Bel Abbes, Condensed Matter & Sustainable Dev Lab LMCDD, Sidi Bel Abbes 22000, Algeria
关键词
Full Heusler compounds; Half metallic; Thermoelectric properties; Density functional theory (DFT); Full potential linearized augmented plane wave (FPLAPW); QUATERNARY HEUSLER; HALF-METALLICITY; AB-INITIO; ALLOYS; STABILITY; SPINTRONICS; GA; SB; AL;
D O I
10.1007/s12648-023-02775-z
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this study, based on the augmented plane wave method (FP-LAPW) as implemented in the Wien2k code, we investigated the structural, mechanical, magnetoelectronic, and thermoelectric properties of Full-Heusler Rb2ZrZ (Z = C, Si, Ge, Sn) compounds. The results of optimization showed that all Rb2ZrZ alloys are stable in the Hg2CuTi-type structure. The calculation of elastic constants and other mechanical parameters was performed, which has shown that all compounds are stable and have a ductile nature. The analysis of the electronic structure using the GGA approximation and improved it by Tran Blaha modified Beck-Johnson confirm that the studied compounds have a half-metallic behavior with a total magnetic moment of 2 mu(beta). Using the semi-classical Boltzmann transport theory within the constant relaxation time approximation and Slack's equation, we obtained the thermoelectric properties and lattice thermal conductivity, respectively. Rb(2)ZrZ compounds have moderate thermal conductivity, a great power factor, and a high Seebeck coefficient at room temperature. The maximum values of the figure of merit were found at 900 K to be 0.52, 0.62, 0.67, and 0.59 for Rb2ZrC, Rb2ZrSi, Rb2ZrGe, and Rb2ZrSn, respectively, which predicts the possibility of using these materials in thermoelectric applications in the future.
引用
收藏
页码:79 / 90
页数:12
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