Optimizing Piezoresistive MEMS Pressure Sensor on a Double Cross Beam Silicon Diaphragm With Statistical Curve-Fitting and Optimization Techniques

被引:6
|
作者
Kanekal, Dadasikandar [1 ]
Jindal, Sumit Kumar [1 ]
机构
[1] Vellore Inst Technol, Sch Elect Engn, Vellore 632014, India
关键词
Sensitivity; Sensors; Stress; Pressure sensors; Piezoresistance; Structural beams; Piezoresistive devices; Central boss; circular diaphragm; COMSOL; curve fitting; double cross beam (DCB); MATLAB; MEMS; piezoresistive pressure sensor; sensitivity; silicon; HIGH-SENSITIVITY; STRUCTURED DIAPHRAGM; DESIGN;
D O I
10.1109/JSEN.2023.3333348
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a novel micro electro mechanical systems (MEMS) piezoresistive-pressure sensor based on a double crossbeam circular diaphragm with a peninsula structure and a central boss for low-pressure applications. The double crossbeam structure enhances sensitivity, while the peninsula and central boss add stability and mechanical robustness. This configuration allows for accurate and reliable pressure measurements in low-pressure environments. The finite element analysis (FEA) with COMSOL was used to obtain the stresses exerted on the piezoresistors and the diaphragm's deflection under the pressure range of 0-10 kPa. With the aid of the technique's curve fitting and FEA, the mechanical performance of the sensor in relation to the structural parameters dimension was developed theoretically. The mathematical model optimized the structural parameters dimension to provide high sensitivity and low non-linearity. Finally, an optimized solution in MATLAB yields the structural dimension's optimal value. Our suggested sensor attained a sensitivity of 47.928 mV/V/kPa and 0.10% nonlinearity error for a pressure load of 0 to 10 kPa. This result has been improved in comparison to the literature.
引用
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页码:169 / 176
页数:8
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