Anomalous Hall effect induced by Berry curvature in the topological nodal-line van der Waals ferromagnet Fe4GeTe2

被引:9
作者
Bera, Satyabrata [1 ]
Chatterjee, Sudipta [2 ]
Pradhan, Subhadip [3 ]
Pradhan, Suman Kalyan [1 ]
Kalimuddin, Sk [1 ]
Bera, Arnab [1 ]
Nandy, Ashis K. [3 ]
Mondal, Mintu [1 ]
机构
[1] Indian Assoc Cultivat Sci, Sch Phys Sci, Kolkata 700032, India
[2] SN Bose Natl Ctr Basic Sci, Dept Condensed Matter & Mat Phys, JD Block,Sect 3, Kolkata 700106, India
[3] Natl Inst Sci Educ & Res Bhubaneswar, OCC Homi Bhabha Natl Inst, Sch Phys Sci, Khurda Rd, Jatni 752050, Odisha, India
关键词
DIRAC SEMIMETAL; WEYL; PHASE;
D O I
10.1103/PhysRevB.108.115122
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The exploration of nontrivial transport phenomena associated with the interplay between magnetic order and spin-orbit coupling (SOC), particularly in van der Waals (vdW) systems, has gained a resurgence of interest due to their easy exfoliation, ideal for two-dimensional (2D) spintronics. We report the near room temperature quasi-2D ferromagnet, Fe4GeTe2 from the iron-based vdW family (FenGeTe2, n = 3,4,5), exhibiting a large anomalous Hall conductivity (AHC), sigma xAy similar to 490 S2-1cm-1 at 2 K. The near quadratic behavior of anomalous Hall resistivity (rho xAy) with the longitudinal resistivity (rho xx) suggests that a dominant AHC contribution is coming from an intrinsic Berry curvature (BC) mechanism. Concomitantly, the electronic structure calculations reveal a large BC arising from SOC induced gapped nodal lines around the Fermi level, governing such large AHC property. Moreover, we also report an exceptionally large anomalous Hall angle (-10.6%) and Hall factor (-0.22 V-1) values which, so far, are the largest in compared to those for other members in this vdW family.
引用
收藏
页数:8
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