Emerging trends in van der Waals 2D TMD heterojunction bipolar transistors

被引:5
|
作者
Aftab, Sikandar [1 ]
Hegazy, Hosameldin Helmy [5 ,6 ]
Iqbal, Muhammad Zahir [2 ]
Rim, You Seoung [3 ,4 ]
机构
[1] Sejong Univ, Dept Intelligent Mechatron Engn, Seoul 05006, South Korea
[2] GIK Inst Engn Sci & Technol, Fac Engn Sci, Nanotechnol Res Lab, Topi 23640, Khyber Pakhtunk, Pakistan
[3] Sejong Univ, Dept Intelligent Mechatron Engn & Convergence Engn, Seoul 05006, South Korea
[4] Sejong Univ, Dept Semicond Syst Engn, Seoul 05006, South Korea
[5] King Khalid Univ, Res Ctr Adv Mat Sci RCAMS, POB 9004, Abha 61413, Saudi Arabia
[6] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha, Saudi Arabia
基金
新加坡国家研究基金会;
关键词
P-N-JUNCTION; BLACK PHOSPHORUS; ELECTRONIC-STRUCTURE; WSE2; PHASE; PHOTOTRANSISTOR; TRANSITION; INTERFACE; STEP;
D O I
10.1039/d2tc04108a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bipolar junction transistor, which is also known as a BJT, has become an essential component for many modern circuits that are used for high-speed computing and communication, which is due to its ability of being able to amplify high-power signals. 2D materials have the potential to be used in order to make BJTs with high amplification and frequency, because they can be naturally thin. Also, the properties of their parts can be changed in a variety of ways. We attempted to summarize the most recent and promising strategies in this review article, which can be used to develop the lateral and vertical BJT architectures. The majority of BJT nanodevices are fabricated using mechanical exfoliation of ultrathin 2D materials in order to explore their electrical behavior. This enables the creation of NPN or PNP BJTs from an intrinsic semiconductor or with different nanomaterials. A comparison of the performance and the characteristics of the BJT devices, which are based on 2D materials, was also conducted. In addition, a discussion of the current challenges and potential solutions is outlined. We hope that this summary of the current research of BJTs based on nanomaterials can be used in many different ways, and will help to progress the development of high-speed computing with integrated circuits that will usher in a new era of digital technology.
引用
收藏
页码:1648 / 1667
页数:20
相关论文
共 50 条
  • [1] Van der Waals 2D layered-material bipolar transistor
    Aftab, Sikandar
    Eom, Jonghwa
    2D MATERIALS, 2019, 6 (03):
  • [2] Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit
    Jadwiszczak, Jakub
    Sherman, Jeffrey
    Lynall, David
    Liu, Yang
    Penkov, Boyan
    Young, Erik
    Keneipp, Rachael
    Drndic, Marija
    Hone, James C.
    Shepard, Kenneth L.
    ACS NANO, 2022, 16 (01) : 1639 - 1648
  • [3] 2D van der Waals Heterojunction Nanophotonic Devices: From Fabrication to Performance
    Yu, Xiantong
    Wang, Xin
    Zhou, Feifan
    Qu, Junle
    Song, Jun
    ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (42)
  • [4] Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics
    Liu, Lixin
    Liu, Kailang
    Zhai, Tianyou
    ACS NANO, 2024, 18 (09) : 6733 - 6739
  • [5] 2D materials and van der Waals heterostructures
    Novoselov, K. S.
    Mishchenko, A.
    Carvalho, A.
    Castro Neto, A. H.
    SCIENCE, 2016, 353 (6298)
  • [6] 2D van der Waals Heterojunction of Organic and Inorganic Monolayers for High Responsivity Phototransistors
    Zhao, Baolin
    Gan, Ziyang
    Johnson, Manuel
    Najafidehaghani, Emad
    Rejek, Tobias
    George, Antony
    Fink, Rainer H.
    Turchanin, Andrey
    Halik, Marcus
    ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (42)
  • [7] Prospects and Opportunities of 2D van der Waals Magnetic Systems
    Wang, Meng-Chien
    Huang, Che-Chun
    Cheung, Chi-Ho
    Chen, Chih-Yu
    Tan, Seng Ghee
    Huang, Tsung-Wei
    Zhao, Yue
    Zhao, Yanfeng
    Wu, Gang
    Feng, Yuan-Ping
    Wu, Han-Chun
    Chang, Ching-Ray
    ANNALEN DER PHYSIK, 2020, 532 (05)
  • [8] Self-Aligned van der Waals Heterojunction Diodes and Transistors
    Sangwan, Vinod K.
    Beck, Megan E.
    Henning, Alex
    Luo, Jiajia
    Bergeron, Hadallia
    Kang, Junmo
    Balla, Itamar
    Inbar, Hadass
    Lauhon, Lincoln J.
    Hersam, Mark C.
    NANO LETTERS, 2018, 18 (02) : 1421 - 1427
  • [9] Hematene: a 2D magnetic material in van der Waals or non-van der Waals heterostructures
    Gonzalez, R. I.
    Mella, J.
    Diaz, P.
    Allende, S.
    Vogel, E. E.
    Cardenas, C.
    Munoz, F.
    2D MATERIALS, 2019, 6 (04)
  • [10] Utilization of the van der Waals Gap of 2D Materials
    Que, Haifeng
    Jiang, Huaning
    Wang, Xingguo
    Zhai, Pengbo
    Meng, Lingjia
    Zhang, Peng
    Gong, Yongji
    ACTA PHYSICO-CHIMICA SINICA, 2021, 37 (11)