Ion Beam-Induced Modifications in the Optical and Structural Characteristics of Lexan Polycarbonate

被引:0
|
作者
Ramola, R. C. [1 ]
Semwal, Anju [1 ]
机构
[1] Hemvati Nandan Bahuguna Garhwal Univ, Dept Phys, Badshahi Thaul Campus, Tehri Garhwal 249199, India
关键词
Lexan polycarbonate; ion beam; ultraviolet-visible; x-ray diffraction; atomic force microscopy; SWIFT HEAVY-IONS; CHEMICAL-MODIFICATIONS; SPACE ENVIRONMENT; CROSS-LINKING; IRRADIATION; POLYMERS; ABSORPTION; RADIATION; ENERGY; PET;
D O I
10.1520/MPC20220067
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lexan polycarbonate samples have been irradiated with lithium, Li+3 (50 MeV) and nickel, Ni+9 (120 MeV) ion beams at the fluence ranging from 3 x 1010 to 3 x 1012 ions/cm2. The effects of ion beam irradiation on Lexan polycarbonate were investigated using x-ray diffraction (XRD), ultraviolet (UV)-visible, and atomic force microscopy (AFM). The UV-visible spectra of ion beam- irradiated films reveal that the optical band gap of polycarbonate decreases with increasing ion beam fluence. The optical band gap shrinks more after irradiation by nickel ion beam because it loses more electronic energy than lithium-ion beams. The number of carbon atoms in carbon clusters incorporated in the Lexan polycarbonate is studied in relation to the optical band gap. The XRD analysis reveals that the intensity of the main peak decreases with increasing ion fluence, indicating the amorphization of Lexan polycarbonate. AFM analysis indicates systematic changes in the surface morphology of polymer films as beam intensity increases.
引用
收藏
页码:198 / 210
页数:14
相关论文
共 50 条
  • [1] Modifications induced by O+8 ion beam to Lexan polycarbonate
    Semwal, Anju
    Negi, Ambika
    Joshi, Veena
    Sehgal, Teena
    Singh, Fouran
    Ramola, R. C.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2013, 168 (7-8): : 594 - 600
  • [2] Study of modifications in Lexan polycarbonate induced by swift O6+ ion irradiation
    Ali, S. Asad
    Kumar, Rajesh
    Singh, F.
    Kuriya, P. K.
    Prasad, Rajendra
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (11-12): : 1813 - 1817
  • [3] Oblique Argon Ion Irradiation Induced Optical and Structural Modifications of Polycarbonate Polymer
    Kumari, Rimpi
    Gupta, Divya
    Sharma, Ambika
    Bura, Manu
    Chawla, Mahak
    Sharma, Annu
    Aggarwal, Sanjeev
    PROCEEDINGS OF THE NATIONAL CONFERENCE ON RECENT ADVANCES IN CONDENSED MATTER PHYSICS: RACMP-2018, 2019, 2093
  • [4] Ion beam-induced changes in optical properties of MgO
    Qian, Y
    Ila, D
    He, KX
    Curley, M
    Poker, DB
    Boatner, LA
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 423 - 428
  • [5] BEAM-INDUCED MODIFICATIONS OF TCNQ MULTILAYERS
    WELLS, SK
    GIERGIEL, J
    LAND, TA
    LINDQUIST, JM
    HEMMINGER, JC
    SURFACE SCIENCE, 1991, 257 (1-3) : 129 - 145
  • [6] Ion beam-induced luminescence
    Huddle, James R.
    Grant, Patrick G.
    Ludington, Alexander R.
    Foster, Robert L.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2): : 475 - 476
  • [7] Optical spectral study of in YSZs with ion beam-induced luminescence
    Zhang, Jinfu
    Wang, Tingshun
    Qiu, Menglin
    Zhao, Guoqiang
    Lv, Shasha
    Wu, Zhenglong
    Wang, Guangfu
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 504 : 6 - 13
  • [8] Ion beam-induced modification of structural and optical properties of MgTiO3 nanocrystalline thin films
    Vinod, Arun
    Rathore, Mahendra Singh
    Kumar, T. Santhosh
    Pamu, D.
    Pathak, A. P.
    Rao, Srinivasa
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2017, 172 (1-2): : 81 - 89
  • [9] Oblique Argon Ion Beam Induced Optical and Structural Modifications in High Density Polyethylene
    Kumari, Rimpi
    Sharma, Ambika
    Gupta, Divya
    Aggarwal, Sanjeev
    DAE SOLID STATE PHYSICS SYMPOSIUM 2018, 2019, 2115
  • [10] ION BEAM-INDUCED EPITAXY OF SILICON
    GOLECKI, I
    CHAPMAN, GE
    LAU, SS
    TSAUR, BY
    MAYER, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C120 - C120