Novel composite materials comprising of silicon nanoparticles (SiNPs) encapsulated with thin layers of silicon nitride and reduced graphene oxide shells (Si@Si3N4@rGO) are prepared using a simple and scalable method. The composite exhibits significantly improved cycling stability and rate capability compared to bare SiNPs. The presence of inactive alpha and beta phases of Si3N4 increases the mechanical endurance of SiNPs. Amorphous SiN (x) , which is possibly present with Si3N4, also contributes to high capacity and Li-ion migration. The rGO sheath enhances the electronic conduction and improves the rate capability. 15-Si@Si3N4@rGO, which is prepared by sintering SiNPs for 15 min at 1300 degrees C, spontaneous-coating GO on Si@Si3N4, and reducing GO to rGO, delivers the highest specific capacity of 1396 mAh g(-1) after 100 cycles at a current density of 0.5 A g(-1). The improved electrochemical performance of 15-Si@Si3N4@rGO is attributed to the unique combination of positive effects by Si3N4 and rGO shells, in which Si3N4 mitigates the issue of large volume changes of Si during charge/discharge, and rGO provides efficient electron conduction pathways. Si@Si3N4@rGO composites are likely to have great potential for a high-performance anode in lithium-ion batteries.
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Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, JapanTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Ding, Yi
Yamada, Riku
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Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, JapanTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Yamada, Riku
Gresback, Ryan
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Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, JapanTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Gresback, Ryan
Zhou, Shu
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Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Zhou, Shu
Pi, Xiaodong
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
机构:
Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, JapanTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Ding, Yi
Yamada, Riku
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h-index: 0
机构:
Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, JapanTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Yamada, Riku
Gresback, Ryan
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h-index: 0
机构:
Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, JapanTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Gresback, Ryan
Zhou, Shu
论文数: 0引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan
Zhou, Shu
Pi, Xiaodong
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R ChinaTokyo Inst Technol, Dept Mech Sci & Engn, Meguro Ku, Tokyo 1528550, Japan