Spin-based magnetic random-access memory for high-performance computing

被引：4
|
作者：
Cai, Kaiming [1 ,2 ]
Jin, Tianli [3 ]
Lew, Wen Siang [3 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Phys, Huazhong, Peoples R China
[2] Interuniv Microelect Ctr IMEC, Leuven, Belgium
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore, Singapore
来源：
NATIONAL SCIENCE REVIEW | 2024年 / 11卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Compendex;
D O I：
10.1093/nsr/nwad272
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing architectures.
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页数：3
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