Beam-generated plasma formation near a dielectric target irradiated by a pulsed electron beam in the forevacuum pressure range
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Kazakov, A., V
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Kazakov, A., V
[1
]
Oks, E. M.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Russian Acad Sci, High Current Elect Inst, Tomsk 634055, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Oks, E. M.
[1
,2
]
Panchenko, N. A.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Panchenko, N. A.
[1
]
Yushkov, Yu G.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Yushkov, Yu G.
[1
]
Zolotukhin, D. B.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Zolotukhin, D. B.
[1
]
机构:
[1] Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
[2] Russian Acad Sci, High Current Elect Inst, Tomsk 634055, Russia
We have investigated the formation of electron beam-generated (EBG) plasma near a dielectric (ceramic) target and an insulated metal target, and the compensation of the negative charge accumulated on the insulated metal target when the targets are irradiated by an intense pulsed electron beam in the forevacuum pressure range (4-15 Pa). It is shown that the density of the EBG plasma near the irradiated ceramic target (or the irradiated insulated metal target) is greater than the plasma density for a beam propagating freely in a vacuum chamber (or for the grounded metal target). The EBG plasma near the target is formed with a certain delay with respect to the electron beam current pulse, because of which the negative potential of the insulated target is also compensated by a delay. The delay time in the formation of the EBG plasma and in the compensation of the target negative potential decreases with increasing gas pressure. Expressions have been proposed for estimating this delay time.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Burdovitsin, V. A.
;
Zolotukhin, D. B.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Zolotukhin, D. B.
;
Oks, E. M.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Inst High Current Elect SB RAS, Tomsk 634055, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Oks, E. M.
;
Panchenko, A.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Burdovitsin, V. A.
;
Oks, E. M.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Inst High Current Elect SB RAS, Tomsk 634055, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Oks, E. M.
;
Zolotukhin, D. B.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Evstaf'eva E.N.
;
Rau E.I.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Rau E.I.
;
Mileev V.N.
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Skobeltsyn Institute of Nuclear Physics, Moscow State University, MoscowInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Mileev V.N.
;
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Novikov L.S.
;
Ditsman S.A.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Ditsman S.A.
;
Sennov R.A.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Burdovitsin, V. A.
;
Zolotukhin, D. B.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Zolotukhin, D. B.
;
Oks, E. M.
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机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Inst High Current Elect SB RAS, Tomsk 634055, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Oks, E. M.
;
Panchenko, A.
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Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Burdovitsin, V. A.
;
Oks, E. M.
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机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Inst High Current Elect SB RAS, Tomsk 634055, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
Oks, E. M.
;
Zolotukhin, D. B.
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h-index: 0
机构:
Tomsk State Univ Control Syst & Radioelect, Tomsk 634050, RussiaTomsk State Univ Control Syst & Radioelect, Tomsk 634050, Russia
机构:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Evstaf'eva E.N.
;
Rau E.I.
论文数: 0引用数: 0
h-index: 0
机构:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Rau E.I.
;
Mileev V.N.
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机构:
Skobeltsyn Institute of Nuclear Physics, Moscow State University, MoscowInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Mileev V.N.
;
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机构:
Novikov L.S.
;
Ditsman S.A.
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h-index: 0
机构:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka
Ditsman S.A.
;
Sennov R.A.
论文数: 0引用数: 0
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机构:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow oblast, 142432, Chernogolovka