Investigation of crystal structure, electrical and dielectric response of Ga3+ substituted Sr-Ni Y-type hexaferrites as a suitable material for high frequency applications

Technology important ferrites ceramic Sr2Ni2GaxFe12-xO22 (x = 0.00, 0.2, 0.4, 0.6, and 0.8) samples were produced using sol-gel auto combustion route. Structural, electrical, dielectric, and magnetic parameters were identified by substituting Ga3+ at the Fe3+ site. It was recognized that an increase of Ga3+ content in (Sr2Ni2-GaxFe12-xO22) ceramic samples first decreased, then increased lattice parameters, and the density of samples was observed. This is because of the ionic radii and atomic weight of Ga3+ and Fe3+ cations. FTIR spectra show two characteristic absorption bands at 444-513 cm(-1) caused by metal-oxygen vibrations. Due to the contribution of smaller grains of samples, the higher values of resistivity were observed, which vary from 3.78 x 10(10) (ohm cm) to 1.13 x 10(11) (ohm cm) by the substitution of Ga3+ ions at the octahedral site. The activation energy was measured between 0.20 and 0.61 eV. The dielectric response of Ga3+ substituted ferrite ceramic samples were studied in the 1 MHz-6 GHz frequency region. The Maxwell-Wagner bilayer model studied the effect of polarization with applied frequency on dielectric parameters. With the substitution of Ga3+, minimal losses in the range 0.34-0.44, about 6 GHz, and a high Q-value of about 10,000 were observed for each sample. In impedance spectroscopy analysis Cole-Cole plots confirm that the dielectric response is because of the influence of grain boundaries. The substitution of Ga3+ enhances saturation magnetization (68.20-71.78 emu/g) while coercivity decreases (655.86-507.86 Oe). In the present finding, the low dielectric loss, moderate permittivity, high value of the Quality factor, and very high value of resistivity of about 1.13 x 10(11) that reduces the eddy current losses suggested that these materials are appropriate candidates for many high-frequency applications such as multilayer chip inductor, dielectric resonators, power applications, and microwave devices.