High-Efficiency Multilevel Volume Diffraction Gratings inside Silicon

被引:2
作者
Butun, Mehmet [1 ]
Saylan, Sueda [1 ,2 ]
Sabet, Rana Asgari [1 ,2 ]
Tokel, Onur [1 ,2 ]
机构
[1] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkiye
[2] Bilkent Univ, UNAM Natl Nanotechnol Res Ctr, TR-06800 Ankara, Turkiye
来源
ACS MATERIALS AU | 2023年 / 3卷 / 06期
关键词
3D laser lithography; Talbot effect; in-chip; multilevel; diffraction gratings; microfabrication; WAVE-GUIDES; LIGHT; WRITTEN;
D O I
10.1021/acsmaterialsau.3c00052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silicon (Si)-based integrated photonics is considered to play a pivotal role in multiple emerging technologies, including telecommunications, quantum computing, and lab-chip systems. Diverse functionalities are either implemented on the wafer surface ("on-chip") or recently within the wafer ("in-chip") using laser lithography. However, the emerging depth degree of freedom has been exploited only for single-level devices in Si. Thus, monolithic and multilevel discrete functionality is missing within the bulk. Here, we report the creation of multilevel, high-efficiency diffraction gratings in Si using three-dimensional (3D) nonlinear laser lithography. To boost device performance within a given volume, we introduce the concept of effective field enhancement at half the Talbot distance, which exploits self-imaging onto discrete levels over an optical lattice. The novel approach enables multilevel gratings in Si with a record efficiency of 53%, measured at 1550 nm. Furthermore, we predict a diffraction efficiency approaching 100%, simply by increasing the number of levels. Such volumetric Si-photonic devices represent a significant advance toward 3D-integrated monolithic photonic chips.
引用
收藏
页码:727 / 733
页数:7
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