Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility

被引:3
|
作者
Chang, Chang [1 ,2 ]
Xie, Xiaoping [1 ,2 ]
Li, Tiantian [3 ]
Cui, Jishi [4 ]
机构
[1] Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian, Shaanxi, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
[3] Sch Elect Engn, Xian, Peoples R China
[4] Sch Informat Engn, Sanming, Peoples R China
基金
中国国家自然科学基金;
关键词
silicon photonics; Ge-on-Si photodetector; PIN junction; carrier mobility; bandwidth; responsivity; HIGH-SPEED; SILICON;
D O I
10.3389/fphy.2023.1150684
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The design of vertical and lateral PIN Ge-on-Si photodetectors was motivated by the disparity in electron and hole mobilities. In the case of vertical PIN junction detectors, configuring the slab region as n-type doping leads to a notable increase in the bandwidth of approximately 20 GHz compared to utilizing p-type doping for the slab. For lateral PIN junction detectors, we determined that setting the length of the n-type slab region to be 2.8 times that of the p-type slab region, based on the carrier saturation drift rate ratio, does not compromise the bandwidth. This configuration enhances the bandwidth while minimizing light absorption loss from the electrode. The proposed design in this study enhances the performance of Ge-on-Si photodetectors without adding complexity to the fabrication process. The principles applied in this study serve as instructive references for the conceptualization of other photonic or electronic devices, reinforcing the widespread applicability of these design strategies.
引用
收藏
页数:6
相关论文
共 33 条
  • [1] High performance Ge-on-Si Avalanche Photodetector
    Jang, Ki-Seok
    Kim, Sanghoon
    Kim, In Gyoo
    Oh, Jin Hyuk
    Kim, Sun Ae
    Joo, Jiho
    Kim, Gyungock
    OPTICAL INTERCONNECTS XVI, 2016, 9753
  • [2] CALCULATING THE NOISE PERFORMANCE OF A Ge-ON-Si SCHOTTKY PHOTODETECTOR
    Dutta, Himadri Sekhar
    Das, N. R.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2011, 53 (01) : 5 - 10
  • [3] High Performance Ge-on-Si Photodetector With Optimized Light Field Distribution by Dual-Injection
    Cui, Jishi
    Chen, Hongmin
    Zhou, Jianping
    Li, Tiantian
    IEEE PHOTONICS JOURNAL, 2022, 14 (02):
  • [4] Frequency Response Estimation of 1.3 μm Waveguide Integrated Vertical PIN Type Ge-on-Si Photodetector Based on the Analysis of Fringing Field in Intrinsic Region
    Seo, Dongjun
    Kwon, Won-Bae
    Kim, Sung Chang
    Park, Chang-Soo
    CURRENT OPTICS AND PHOTONICS, 2019, 3 (06) : 510 - 515
  • [5] Si/Ge uni-traveling carrier photodetector
    Piels, Molly
    Bowers, John E.
    OPTICS EXPRESS, 2012, 20 (07): : 7488 - 7495
  • [6] Ge-on-Si Photodetector with Novel Metallization Schemes for On-Chip Optical Interconnect
    Yun, Mina
    Cho, Seongjae
    Kang, Sae-Kyoung
    Jung, Sunghun
    Park, Byung-Gook
    2015 IEEE INTERNATIONAL SYMPOSIUM ON CONSUMER ELECTRONICS (ISCE), 2015,
  • [7] Dual-Band Ge-on-Si Photodetector Array With Custom, Integrated Readout Electronics
    De Iacovo, Andrea
    Mitri, Federica
    Ballabio, Andrea
    Frigerio, Jacopo
    Isella, Giovanni
    Ria, Andrea
    Cicalini, Mattia
    Bruschi, Paolo
    Colace, Lorenzo
    IEEE SENSORS JOURNAL, 2022, 22 (04) : 3172 - 3180
  • [8] Ultrafast carrier recombination in highly n-doped Ge-on-Si films
    Allerbeck, J.
    Herbst, A. J.
    Yamamoto, Y.
    Capellini, G.
    Virgilio, M.
    Brida, D.
    APPLIED PHYSICS LETTERS, 2019, 114 (24)
  • [9] 25 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetector and CMOS amplifier circuit for optical interconnects
    Joo, Jiho
    Jang, Ki-Seok
    Kim, Sanghoon
    Kim, In Gyoo
    Oh, Jin Hyuk
    Kim, Sun Ae
    Kim, Gyungock
    Jeong, Gyu-Seob
    Chi, Hankyu
    Jeong, Deog-Kyoon
    SILICON PHOTONICS X, 2015, 9367
  • [10] High-Speed and High-Power Ge-on-Si Photodetector with Bilateral Mode-Evolution-Based Coupler
    Li, Daimo
    Yang, Yan
    Li, Bin
    Tang, Bo
    Zhang, Peng
    Ou, Xiangpeng
    Sun, Fujun
    Li, Zhihua
    PHOTONICS, 2023, 10 (02)