Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films

被引：2

作者：

Li, Xinzhi ^{[1
]}

Vehkamaki, Marko ^{[1
]}

Chundak, Mykhailo ^{[1
]}

Mizohata, Kenichiro ^{[2
]}

Vihervaara, Anton ^{[1
]}

Leskela, Markku ^{[1
]}

Putkonen, Matti ^{[1
]}

Ritala, Mikko ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, POB 55, FI-00014 Helsinki, Finland

[2] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland

来源：

ADVANCED MATERIALS INTERFACES | 2023年 / 10卷 / 18期

基金：

芬兰科学院;

关键词：

atomic layer deposition; dielectric constant; doped Al2O3; THIN-FILMS; SPACERS; SILICON; GROWTH;

D O I：

10.1002/admi.202300173

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper presents preparation of boron-doped Al2O3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures of 160-300 degrees C are studied, giving a maximum growth per cycle (GPC) of 0.77 angstrom at 200 degrees C. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) are used to study the surface morphology and roughness of the films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), Time-of-flight elastic recoil detection analysis (ToF-ERDA), and X-ray photoelectron spectroscopy (XPS) are used to study the composition of the films. An annealing process is carried out at 450 degrees C for 1 h to investigate its effect on the elemental composition and electrical properties of the boron-doped Al2O3 thin films. The boron-doped Al2O3 70 nm thick film deposited at 200 degrees C has a boron content of 3.7 at.% with low leakage current density (10(-9) to 10(-6) A cm(-2)) when the film thickness is 70 nm. The dielectric constant of this boron doped Al2O3 film is 5.18.

引用

页数：8

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