An eco-friendly bandgap engineering of semiconductor graphene oxide

被引：3
作者：
Salazar, Y. Cruz [1 ,2 ]
Bellucci, S. [3 ]
Guevara, M. [1 ]
Gomez, C. Vacacela [3 ]
Caicedo, I. [4 ]
Bun, J. [4 ]
Lopez, S. [4 ]
Mayorga, D. [4 ]
Scarcello, A. [1 ,2 ]
Polanco, M. Arias [4 ,5 ]
Straface, S. [5 ,6 ]
Tene, T. [1 ]
Caputi, L. S. [1 ,2 ]
机构：
[1] Univ Calabria, UNICARIBE Res Ctr, I-87036 Arcavacata Di Rende, CS, Italy
[2] Univ Calabria, Dept Phys, Surface Nanosci Grp, Via P Bucci,Cubo 33C, I-87036 Arcavacata Di Rende, CS, Italy
[3] INFN Lab Nazl Frascati, I-00044 Frascati, RM, Italy
[4] Escuela Super Politecn Chimborazo ESPOCH, Fac Mech Engn, Riobamba 060155, Ecuador
[5] Inst Tecnol Santo Domingo, Lab Nanotecnol, Area Ciencias Basicas & Ambientales, Av Los Proceres, Santo Domingo 10602, Dominican Rep
[6] Univ Calabria, Dept Environm Engn DIAm, Via P Bucci,Cubo 42B, I-87036 Arcavacata Di Rende, CS, Italy
来源：
SOLID-STATE ELECTRONICS | 2023年 / 207卷
关键词：
Oxidized graphenes; Optical bandgap; Tauc analysis; Spectroscopic and morphological; characterization; Electrical properties; ELECTRONIC-PROPERTIES; REDUCTION;
D O I：
10.1016/j.sse.2023.108705
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Here, we demonstrate the tunability of the optical bandgap of graphene oxide (GO) and reduced graphene oxide (rGO) using an eco-friendly oxidation-reduction process. Based on UV-vis spectra and Tauc analysis, we observed a decrease in bandgap from 4.09 eV to 1.92 eV, effectively transforming GO from an insulating material to a semiconductor material. The transformation of GO into rGO is further characterized by FTIR, Raman, and TEM measurements. Additionally, electrical measurements showed that GO has a resistance of about 106, indicating its insulating nature. However, the reduction process significantly reduced the resistance of rGO to around 104, restoring its conductivity. Our results provide evidence for the potential use of GO and rGO in the semiconductor industry with tunable properties.
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页数：6
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