Single crystal growth of topological semimetals and magnetic topological materials

Topological materials have attracted much attention due to their novel physical properties. These materialscan not only serve as a platform for studying the fundamental physics, but also demonstrate a significantpotential application in electronics, and they are studied usually in two ways. One is to constantly explore newexperimental phenomena and physical problems in existing topological materials, and the other is to predict anddiscover new topological material systems and carry out synthesis for further studies. In a word, high-qualitycrystals are very important for studying quantum oscillations, angle resolved photoemission spectra or scanningtunneling microscopy. In this work, the classifications and developments of topological materials, includingtopological insulators, topological semimetals, and magnetic topological materials, are introduced. As usuallyemployed growth methods in growing topological materials, flux and vapour transport methods are introducedin detail. Other growth methods, such as Bridgman, float-zone, vapour deposition and molecular beam epitaxymethods, are also briefly mentioned. Then the details about the crystal growth of some typical topologicalmaterials, including topological insulators/semimetals, high Chern number chiral topological semimetals andmagnetic topological materials, are elaborated. Meanwhile, the identification of crystal quality is also brieflyintroduced, including the analysis of crystal composition and structure, which are greatly important