Dual Band Radio Frequency Detector Based on the Simultaneous Excitation of Free and Reference Layer in a Magnetic Tunnel Junction

被引：4
作者：
Gupta, Pankhuri [1 ]
Sisodia, Naveen [2 ]
Bohnert, Tim [3 ]
Costa, Jose Diogo [3 ]
Ferreira, Ricardo [3 ]
Muduli, Pranaba Kishor [1 ]
机构：
[1] Indian Inst Technol Delhi, Dept Phys, Delhi 110016, India
[2] CNRS, CEA, SPINTEC, F-38000 Grenoble, France
[3] Int Iberian Nanotechnol Lab INL, Av Mestre Jose Veiga S-N, P-4715330 Braga, Portugal
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 01期
关键词：
Magnetic tunnel junction; microwave detectors; magnetic microwave devices; SPIN-TRANSFER-TORQUE;
D O I：
10.1109/LED.2022.3222071
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate an energy efficient method of radio frequency (RF) detection for two bands (S + C and X- band) using a magnetic tunnel junction-based nanopillar. For a carefully chosen geometry, two modes are simultaneously excited with the opposite sign of rectification voltage, enabling microwave band identification in a single device without the requirement for a DC bias. Micromagnetic simulations demonstrate that the opposite sign of rectification voltage is due to the simultaneous excitation of the free and reference layers. A method of enhancement of bandwidth in the X-band is discussed.
引用
收藏
页码：172 / 175
页数：4
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