Physical Origin of Threshold Switching in Amorphous Chromium-Doped V2O3

被引：1

作者：

Mohr, Johannes ^{[1
]}

Bengel, Christopher ^{[1
]}

Hennen, Tyler ^{[1
]}

Bedau, Daniel ^{[2
]}

Menzel, Stephan ^{[3
]}

Waser, Rainer ^{[1
,3
]}

Wouters, Dirk J. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52074 Aachen, Germany

[2] Western Digital San Jose Res Ctr, 5601 Great Oaks Pkwy, San Jose, CA 95119 USA

[3] Res Ctr Julich, Peter Grunberg Inst PGI 7, D-52428 Julich, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 22期

关键词：

compact modeling; Mott insulators; negative differential resistances; threshold switching; V2O3; METAL-INSULATOR-TRANSITION;

D O I：

10.1002/pssa.202300405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Devices made of amorphous thin films of the prototypical Mott-insulator chromium-doped V2O3 show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused by the formation of a crystalline filament, in which a thermal runaway effect can occur. A compact model is developed that can describe the switching behavior as well as its inherent variability. The influence of the doping concentration and oxygen stoichiometry on the switching behavior is characterized and by fitting the model to the experimental data, the underlying physical changes are extracted.

引用

页数：9

共 50 条

[41] METAL-INSULATOR TRANSITIONS IN ZR AND MG DOPED V2O3
MCWHAN, DB
MENTH, A
REMEIKA, JP
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (01): : 103 - &
[42] HEAT-CAPACITY OF A1-DOPED V2O3 ALLOYS
KUWAMOTO, H
DICKERSON, DL
KEER, HV
HONIG, JM
MATERIALS RESEARCH BULLETIN, 1976, 11 (10) : 1301 - 1305
[43] ELECTRONIC SPECIFIC HEAT OF METALLIC TI-DOPED V2O3
MCWHAN, DB
REMEIKA, JP
RICE, TM
BRINKMAN, WF
MAITA, JP
MENTH, A
PHYSICAL REVIEW LETTERS, 1971, 27 (14) : 941 - &
[44] Critical behavior of the Mott transition in Cr-doped V2O3
Jayaraman, A.
McWhan, D. B.
Remeika, J. P.
Dernier, P. D.
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (09): : 3751 - 3756
[45] MECHANISM OF ELECTRON-TRANSPORT IN CR-DOPED V2O3
SINHA, APB
CHANDRASHEKHAR, GV
HONIG, JM
JOURNAL OF SOLID STATE CHEMISTRY, 1975, 12 (3-4) : 402 - 405
[46] CRITICAL BEHAVIOR OF MOTT TRANSITION IN CR-DOPED V2O3
JAYARAMA.A
REMEIKA, JP
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 386 - &
[47] Tuning the magnetic properties of V2O3/CoFeB heterostructures across the V2O3 structural transition
Polewczyk, V
Chaluvadi, S. K.
Orgiani, P.
Panaccione, G.
Vinai, G.
Rossi, G.
Torelli, P.
PHYSICAL REVIEW MATERIALS, 2021, 5 (03)
[48] Physical properties and lattice dynamics of bixbyite-type V2O3
Dominik A. Weber
Christian Schwickert
Anatoliy Senyshyn
Martin Lerch
Rainer Pöttgen
Journal of Materials Research, 2017, 32 : 2397 - 2404
[49] A Brillouin study of the temperature-dependence of the acoustic modes across the insulator-metal transitions in V2O3 and Cr-doped V2O3
Seikh, Md. Motin
Narayana, Chandrabhas
Sood, A. K.
Murugavel, P.
Kim, M. W.
Metcalf, P. A.
Honig, J. M.
Rao, C. N. R.
SOLID STATE COMMUNICATIONS, 2006, 138 (09) : 466 - 471
[50] PHONONS IN V2O3 AND TI2O3
YETHIRAJ, M
WERNER, SA
YELON, WB
HONIG, JM
AIP CONFERENCE PROCEEDINGS, 1982, (89) : 343 - 345

← 1 2 3 4 5 →