Physical Origin of Threshold Switching in Amorphous Chromium-Doped V2O3

被引：1

作者：

Mohr, Johannes ^{[1
]}

Bengel, Christopher ^{[1
]}

Hennen, Tyler ^{[1
]}

Bedau, Daniel ^{[2
]}

Menzel, Stephan ^{[3
]}

Waser, Rainer ^{[1
,3
]}

Wouters, Dirk J. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52074 Aachen, Germany

[2] Western Digital San Jose Res Ctr, 5601 Great Oaks Pkwy, San Jose, CA 95119 USA

[3] Res Ctr Julich, Peter Grunberg Inst PGI 7, D-52428 Julich, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2024年 / 221卷 / 22期

关键词：

compact modeling; Mott insulators; negative differential resistances; threshold switching; V2O3; METAL-INSULATOR-TRANSITION;

D O I：

10.1002/pssa.202300405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Devices made of amorphous thin films of the prototypical Mott-insulator chromium-doped V2O3 show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused by the formation of a crystalline filament, in which a thermal runaway effect can occur. A compact model is developed that can describe the switching behavior as well as its inherent variability. The influence of the doping concentration and oxygen stoichiometry on the switching behavior is characterized and by fitting the model to the experimental data, the underlying physical changes are extracted.

引用

页数：9

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