Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes

被引:4
作者
Ding, Yu [1 ]
Zhou, Shenhui [1 ]
Zhuang, Zhe [2 ]
Sang, Yimeng [1 ]
Yu, Junchi [1 ]
Xu, Feifan [1 ]
Huang, Jinpeng [1 ]
Xu, Weizong [1 ]
Tao, Tao [1 ]
Zhi, Ting [3 ,4 ]
Lu, Hai [1 ]
Huang, Kai [5 ]
Zhang, Rong [1 ,5 ]
Liu, Bin [1 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Sch Integrated Circuits, Suzhou 215163, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210093, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210093, Peoples R China
[5] Xiamen Univ, Tan Kah Kee Innovat Lab, Inst Future Display Technol, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
OHMIC CONTACTS; EFFICIENCY; LEDS;
D O I
10.1364/OE.507115
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We proposed a "Ni sacrifice" method to fabricate Al-based highly reflective pelectrode in the ultraviolet spectral region for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). The "Ni sacrifice" p-electrode could have a high optical reflectivity of around 90% at the DUV spectral region below 300 nm. Compared to Ni/Au, indium tin oxide (ITO), and Pd p-contacts, the "Ni sacrifice" led to a higher resistivity of p-contacts and a slightly higher operated voltage of the DUV-LEDs (within 0.6 V at 20 mA). Although the electrical performance was degraded slightly, the light output power and external quantum efficiency of the DUV-LEDs could be improved by utilizing the "Ni sacrifice" p-electrode. Besides, we introduced a grid of vias in the device mesa and reduced the diameter of the vias to achieve an enhanced peak external quantum efficiency (EQE) up to 1.73%. And the wall-plug efficiency (WPE) of DUV-LEDs with a "Ni sacrifice" p-electrode was higher than that of Ni/Au p-electrode DUV-LEDs at low currents. These results highlight the great potential of the proposed "Ni sacrifice" reflective p-electrode for use in DUV-LEDs.
引用
收藏
页码:39747 / 39756
页数:10
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