Improved self-heating extraction with RF technique at cryogenic temperatures

被引：0

作者：

Vanbrabant, Martin ^{[1
]}

Raskin, Jean-Pierre ^{[1
]}

Kilchytska, Valeriya ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM, Louvain La Neuve, Belgium

来源：

SOLID-STATE ELECTRONICS | 2023年 / 207卷

关键词：

FD-SOI; UTBB; Self; -heating; Substrate effect; OPERATION; ANALOG;

D O I：

10.1016/j.sse.2023.108708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work studies self-heating effect using the modified RF characterization technique at cryogenic temperatures down to 77 K. It is shown that neglecting the transition related to the substrate effect in the output conductance frequency response can result in a strong underestimation of the thermal resistance, especially at bias conditions close to the threshold voltage (Vth) region and alter its temperature, length and bias dependencies which is important to consider for device modelling.

引用

页数：4

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