Low-Temperature Sintering of Bi(Ni0.5Ti0.5)O3-BiFeO3-Pb(Zr0.5Ti0.5)O3 Ceramics and Their Performance

被引:2
作者
Wang, Wuyang [1 ]
Wang, Shihao [2 ]
Sun, Jun [2 ]
Wang, Qiushi [2 ]
Fang, Bijun [2 ]
机构
[1] Nanjing Univ Posts & Telecommun, Bell Honors Sch, Nanjing 210023, Peoples R China
[2] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & En, Natl Expt Demonstrat Ctr Mat Sci & Engn, Sch Mat Sci & Engn,Jiangsu Prov Cultivat Base Stat, Changzhou 213164, Peoples R China
关键词
Bi(Ni0.5Ti0.5)O-3 end component; sintering aid; sintering temperature; relaxation behavior; electrical performance; DIFFUSE PHASE-TRANSITION; FERROELECTRIC CERAMICS; SOLID-SOLUTIONS; IMPEDANCE;
D O I
10.3390/ma16093459
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A low-temperature sintering strategy was realized for preparing 0.21Bi(Ni0.5Ti0.5)O-3-0.05BiFeO(3)-0.74Pb(Zr0.5Ti0.5)O-3 (0.21BNT-0.05BF-0.74PZT) ceramics by conventional ceramic processing by adding low melting point BiFeO3 and additional sintering aid LiBO2. Pure perovskite 0.21BNT-0.05BF-0.74PZT ceramics are prepared at relatively low sintering temperatures, and their structure presents tetragonal distortion that is affected slightly by the sintering temperature. The 1030 degrees C sintered samples have high densification accompanied by relatively large grains. All ceramics have excellent dielectric performance with a relatively high temperature of dielectric constant maximum, and present an apparent relaxation characteristic. A narrow sintering temperature range exists in the 0.21BNT-0.05BF-0.74PZT system, and the 1030 degrees C sintered 0.21BNT-0.05BF-0.74PZT ceramics exhibit overall excellent electrical performance. The high-temperature conductivity can be attributed to the oxygen vacancies' conduction produced by the evaporation of Pb and Bi during sintering revealed by energy dispersive X-ray measurement.
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页数:16
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