Electron beam irradiation effects on GaN/InGaN multiple quantum well structures

被引：2

作者：

Yu, Liyuan ^{[1
,2
]}

Hu, Jianhua ^{[1
]}

Ma, Yuchen ^{[1
]}

Zhao, Lixia ^{[1
,2
]}

机构：

[1] Tiangong Univ, Sch Elect & Informat Engn, Tianjin Key Lab Optoelect Detect Technol & Sys, Tianjin 300387, Peoples R China

[2] Tiangong Univ, Minist Educ, High Power Solid State Lighting Applicat Syst, Engn Res Ctr, Tianjin 300387, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2023年 / 38卷 / 10期

关键词：

electron beam irradiation; InGaN; multiple quantum wells; irradiation-induced defects; YELLOW LUMINESCENCE; OPTICAL-PROPERTIES; INGAN/GAN; GAN; CATHODOLUMINESCENCE; DEPENDENCE; DEFECTS; FIELDS; NOISE;

D O I：

10.1088/1361-6641/acec65

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based semiconductors have a strong potential for applications in space systems due to their high radiation resistance. Here, we investigate the influence of 1.5 MeV electron irradiation on the structural, electrical, and optical properties of InGaN/GaN multiple quantum wells (MQWs). The results show that at lower electron fluencies, the indium content in the InGaN/GaN MQWs decreases by about 0.4% because of the ionization of valence electrons induced by electron irradiation, but at higher electron fluencies, the indium concentration increases by about 2.3% because of the appearance of indium-rich 'clusters' in the homogeneous quantum wells. Moreover, the fitted activation energy of the irradiated quantum wells increases by about 16% compared to that of the as-grown MQWs.

引用

页数：6

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