Unraveling Spatiotemporal Transient Dynamics at the Nanoscale via Wavelet Transform-Based Kelvin Probe Force Microscopy

被引:4
作者
Biglarbeigi, Pardis [1 ,2 ]
Morelli, Alessio [1 ]
Pauly, Serene [3 ]
Yu, Zidong [4 ]
Jiang, Wenjun [5 ]
Sharma, Surbhi [6 ]
Finlay, Dewar [1 ]
Kumar, Amit [3 ]
Soin, Navneet [1 ,7 ]
Payam, Amir Farokh [1 ]
机构
[1] Ulster Univ, Nanotechnol & Integrated Bioengn Ctr NIBEC, Sch Engn, Belfast BT15 1AP, North Ireland
[2] Univ Dundee, Sch Sci & Engn, Dundee DD1 4NH, Scotland
[3] Queens Univ Belfast, Sch Math & Phys, Belfast BT7 1NN, North Ireland
[4] Univ Bolton, Inst Mat Res & Innovat IMRI, Bolton BL3 5AB, England
[5] Dalian Maritime Univ, Coll Transportat Engn, Dalian 116026, Peoples R China
[6] Federat Univ Australia, Ctr New Energy Transit Res Technol CfNETR, Churchill, Vic 3810, Australia
[7] Swinburne Univ Technol, Sch Sci Comp & Engn Technol, Hawthorn, Vic 3122, Australia
关键词
Kelvin probe force microscopy (KPFM); time-resolvedKPFM (tr-KPFM); wavelet transforms; surface photovoltage; transient quantification; SINGLE;
D O I
10.1021/acsnano.3c06488
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Mechanistic probing of surface potential changes arising from dynamic charge transport is the key to understanding and engineering increasingly complex nanoscale materials and devices. Spatiotemporal averaging in conventional heterodyne detection-based Kelvin probe force microscopy (KPFM) inherently limits its time resolution, causing an irretrievable loss of transient response and higher-order harmonics. Addressing this, we report a wavelet transform (WT)-based methodology capable of quantifying the sub-ms charge dynamics and probing the elusive transient response. The feedback-free, open-loop wavelet transform KPFM (OL-WT-KPFM) technique harnesses the WT's ability to simultaneously extract spatial and temporal information from the photodetector signal to provide a dynamic mapping of surface potential, capacitance gradient, and dielectric constant at a temporal resolution 3 orders of magnitude higher than the lock-in time constant. We further demonstrate the method's applicability to explore the surface-photovoltage-induced sub-ms hole-diffusion transient in bismuth oxyiodide semiconductor. The OL-WT-KPFM concept is readily applicable to commercial systems and can provide the underlying basis for the real-time analysis of transient electronic and electrochemical properties.
引用
收藏
页码:21506 / 21517
页数:12
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