Performance and reliability of state-of-the-art commercial UVC light emitting diodes

被引：4
作者：
Loveless, James [1 ]
Kirste, Ronny [2 ]
Moody, Baxter [2 ]
Reddy, Pramod [2 ]
Rathkanthiwar, Shashwat [1 ]
Almeter, Jack [1 ]
Collazo, Ramon [1 ]
Sitar, Zlatko [1 ,2 ]
机构：
[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Adroit Mat, Cary, NC USA
来源：
SOLID-STATE ELECTRONICS | 2023年 / 209卷
关键词：
UVC LED; Reliability; AlN native substrate; Sapphire substrate; EQE; L70; lifetime; LEDS; GROWTH; DROOP; ALN;
D O I：
10.1016/j.sse.2023.108775
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Commercially-available, sapphire- and AlN-based ultraviolet-C light emitting diodes (UVC LEDs) emitting in the range of 265-275 nm were evaluated and compared. Both AlN- and sapphire-based devices produced clean emission lines without parasitics and well-exceeded the industry-required L70 lifetimes of 10,000 h. Electrical and optical characterization revealed that devices grown on native aluminum nitride (AlN) substrates sustained up to 2.6 times greater current density and 6 times higher output power densities than their counterparts grown on sapphire substrate. Interestingly, the cost-performance ($/mW) was similar for both platforms despite the significantly pricier AlN substrates.
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页数：6
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