Performance and reliability of state-of-the-art commercial UVC light emitting diodes

被引：3

作者：

Loveless, James ^{[1
]}

Kirste, Ronny ^{[2
]}

Moody, Baxter ^{[2
]}

Reddy, Pramod ^{[2
]}

Rathkanthiwar, Shashwat ^{[1
]}

Almeter, Jack ^{[1
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
,2
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat, Cary, NC USA

来源：

SOLID-STATE ELECTRONICS | 2023年 / 209卷

关键词：

UVC LED; Reliability; AlN native substrate; Sapphire substrate; EQE; L70; lifetime; LEDS; GROWTH; DROOP; ALN;

D O I：

10.1016/j.sse.2023.108775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Commercially-available, sapphire- and AlN-based ultraviolet-C light emitting diodes (UVC LEDs) emitting in the range of 265-275 nm were evaluated and compared. Both AlN- and sapphire-based devices produced clean emission lines without parasitics and well-exceeded the industry-required L70 lifetimes of 10,000 h. Electrical and optical characterization revealed that devices grown on native aluminum nitride (AlN) substrates sustained up to 2.6 times greater current density and 6 times higher output power densities than their counterparts grown on sapphire substrate. Interestingly, the cost-performance ($/mW) was similar for both platforms despite the significantly pricier AlN substrates.

引用

页数：6

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