Synaptic Properties of Geopolymer Memristors: Synaptic Plasticity, Spike-Rate-Dependent Plasticity, and Spike-Timing-Dependent Plasticity

被引:22
作者
Shakib, Mahmudul Alam [1 ]
Gao, Zhaolin [1 ]
Lamuta, Caterina [1 ]
机构
[1] Univ Iowa, Coll Engn, Dept Mech Engn, Iowa City, IA 52242 USA
关键词
artificial synapse; geopolymer; synaptic memory; memristor; synaptic plasticity; STDP; SRDP; Hebbian learning; LONG-TERM POTENTIATION; MEMORY; DEPRESSION; BEHAVIORS; DEVICE; AREA;
D O I
10.1021/acsaelm.3c00654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Memristors, also known as artificial synapses, are devices that are able to mimic the memory functions of biological synapses. To emulate synaptic functions, memristors need to exhibit plasticity, which is a pivotal phenomenon in their biological counterparts. In a previous work, we demonstrated that geopolymers present memristive properties. In this work, we study different types of synaptic plasticity properties of geopolymer memristors. We demonstrate short-term and long-term memory resulting from potentiation-depression; Hebbian learning inspired spike-timing-dependent plasticity, spike-rate-dependent plasticity, history-dependent plasticity, paired-pulse facilitation, paired-pulse depression, and post-tetanic potentiation. These synaptic properties can be ascribed to the electro-osmosis-induced movement of ions in the capillaries and pores of the geopolymer memristors. These properties are extremely promising for the use of geopolymers in neuromorphic computing applications.
引用
收藏
页码:4875 / 4884
页数:10
相关论文
共 82 条
[41]   Synaptic Plasticity and Metaplasticity of Biological Synapse Realized in a KNbO3 Memristor for Application to Artificial Synapse [J].
Lee, Tae-Ho ;
Hwang, Hyun-Gyu ;
Woo, Jong-Un ;
Kim, Dae-Hyeon ;
Kim, Tae-Wook ;
Nahm, Sahn .
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (30) :25673-25682
[42]   TEMPORAL CONTIGUITY REQUIREMENTS FOR LONG-TERM ASSOCIATIVE POTENTIATION DEPRESSION IN THE HIPPOCAMPUS [J].
LEVY, WB ;
STEWARD, O .
NEUROSCIENCE, 1983, 8 (04) :791-797
[43]   Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature [J].
Li, Jiayu ;
Qian, Yangzhou ;
Li, Wen ;
Yu, Songcheng ;
Ke, Yunxin ;
Qian, Haowen ;
Lin, Yen-Hung ;
Hou, Cheng-Hung ;
Shyue, Jing-Jong ;
Zhou, Jia ;
Chen, Ye ;
Xu, Jiangping ;
Zhu, Jintao ;
Yi, Mingdong ;
Huang, Wei .
ADVANCED MATERIALS, 2023, 35 (23)
[44]   Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system [J].
Li, Sizhao ;
Zeng, Fei ;
Chen, Chao ;
Liu, Hongyan ;
Tang, Guangsheng ;
Gao, Shuang ;
Song, Cheng ;
Lin, Yisong ;
Pan, Feng ;
Guo, Dong .
JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (34) :5292-5298
[45]   Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems [J].
Li, Yi ;
Zhong, Yingpeng ;
Zhang, Jinjian ;
Xu, Lei ;
Wang, Qing ;
Sun, Huajun ;
Tong, Hao ;
Cheng, Xiaoming ;
Miao, Xiangshui .
SCIENTIFIC REPORTS, 2014, 4
[46]   Ultrafast Synaptic Events in a Chalcogenide Memristor [J].
Li, Yi ;
Zhong, Yingpeng ;
Xu, Lei ;
Zhang, Jinjian ;
Xu, Xiaohua ;
Sun, Huajun ;
Miao, Xiangshui .
SCIENTIFIC REPORTS, 2013, 3
[47]   Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse [J].
Luo, Xiliang ;
Ming, Jianyu ;
Gao, Jincheng ;
Zhuang, Jingwen ;
Fu, Jingwei ;
Ren, Zihan ;
Ling, Haifeng ;
Xie, Linghai .
FRONTIERS IN NEUROSCIENCE, 2022, 16
[48]  
Ohno T, 2011, NAT MATER, V10, P591, DOI [10.1038/nmat3054, 10.1038/NMAT3054]
[49]   Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor [J].
Pan, Ying ;
Wan, Tao ;
Du, Haiwei ;
Qu, Bo ;
Wang, Danyang ;
Ha, Tae-Jun ;
Chu, Dewei .
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 757 :496-503
[50]   Obligatory role of NR2A for metaplasticity in visual cortex [J].
Philpot, Benjamin D. ;
Cho, Kathleen K. A. ;
Bear, Mark F. .
NEURON, 2007, 53 (04) :495-502