Fully-transparent self-powered ultraviolet photodetector based on GaOx/ ZnO heterojunction for solar-blind imaging

被引:19
作者
Li, Xudong [1 ]
Wang, Xuan [1 ]
Luo, Jiangshuai [1 ]
Jiang, Jili [1 ]
Ding, Ke [1 ]
Ye, Liyu [1 ]
Xiong, Yuanqiang [1 ]
Pang, Di [1 ]
Li, Honglin [1 ]
Yu, Peng [1 ]
Kong, Chunyang [1 ]
Ye, Lijuan [1 ]
Zhang, Hong [1 ]
Li, Wanjun [1 ]
机构
[1] Chongqing Normal Univ, Coll Phys & Elect Engn, Chongqing Key Lab Photoelect Funct Mat, Chongqing 401331, Peoples R China
关键词
Amorphous Ga 2 O 3; Heterojunction; Fully-transparent; Self-powered; Solar-blind imaging; THIN-FILMS;
D O I
10.1016/j.mtcomm.2023.106118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the development of fully-transparent electronic materials and energy-efficient photodetectors, self-powered deep-ultraviolet photodetectors that are fully transparent are expected to have a wide range of applications in solar-blind imaging. Here, we present the first investigation of a self-powered, fully transparent Ga2O3 deepultraviolet photodetector array for solar-blind imaging. The device is composed of an amorphous Ga2O3/ZnO heterojunction (GaOx/ZnO) with indium tin oxide (ITO) transparent electrodes, which was prepared using a fully magnetron sputtering method. The fully-transparent device demonstrates exceptional performance at both - 5 V bias and 0 V bias, with a high responsivity of 6.5 x 103 A/W and 13 mA/W, respectively, coupled with excellent stability. Moreover, the device is self-powered due to the built-in electric field formed at the interface of GaOx and ZnO, which efficiently drives carrier motion and generates photocurrent. Finally, we demonstrate the feasibility of transparent devices for solar-blind imaging at 0 V bias by constructing a 5 x 4 GaOx/ZnO heterojunction solar-blind photodetector array, which produces a high-contrast image of the target object. This work provides a new strategy for developing Ga2O3-based fully-transparent self-powered photodetector arrays for solar-blind imaging.
引用
收藏
页数:8
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