Investigation of Self-Heating Effect in Forksheet FETs for Sub-3-nm Node

被引：2
|
作者：
Lim, Jaewan [1 ]
Jeong, Jinsu [1 ]
Lee, Junjong [1 ]
Lee, Seunghwan [1 ]
Lee, Sanguk [1 ]
Baek, Rock-Hyun [1 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Dept Elect Engn, 77 Cheongam Ro, Pohang 37673, Gyeongbuk, South Korea
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
基金：
新加坡国家研究基金会;
关键词：
Forksheet FETs; Nanosheet FETs; SelfHeating Effect; TCAD simulation; Sub-3-nm node;
D O I：
10.1109/EDTM55494.2023.10103113
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating effect (SHE) in silicon forksheet field-effect transistors (FSFETs) and nanosheet FETs (NSFETs) for sub-3-nm node was analyzed using calibrated TCAD. For SHE investigation, electrical and thermal properties, and reliability were assessed according to channel width (WCH). A silicon-nitride wall deteriorated the thermal properties of FSFETs; however, FSFETs were electrically superior to NSFETs. Furthermore, as WCH decreases, FSFETs exhibited lower lattice temperature and more improved reliability than NSFETs. Therefore, these quantitative comparisons revealed FSFETs surpassed NSFETs in terms of SHE.
引用
收藏
页数：3
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