Ultra-High-Resolution Perovskite Quantum Dot Light-Emitting Diodes

被引:11
|
作者
Mao, Chaomin [1 ,2 ]
Ju, Songman [1 ,2 ]
Zheng, Jinping [1 ]
Zheng, Yueting [1 ]
Xu, Zhongwei [1 ]
Lin, Lihua [1 ,2 ]
Hu, Hailong [1 ,2 ]
Yang, Kaiyu [1 ,2 ]
Guo, Tailiang [1 ,2 ]
Li, Fushan [1 ,2 ]
机构
[1] Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350108, Fujian, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
high-resolution; leakage current; light-emitting diodes; nanoimprint; perovskite quantum dots; EFFICIENCY; MATRIX;
D O I
10.1002/adom.202202058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Perovskite quantum dots (PQDs) have been widely used to realize light-emitting diodes (LEDs) with high color purity, efficiency, and wide color gamut. Due to the demand for huge amount of display information, development on high-resolution PQD LEDs (PQLEDs) with massive pixel density are highly desired. Herein, high-resolution PQLEDs are fabricated by using nanoimprint technique. By preparing a honeycomb-insulating polymer polymethyl methacrylate (PMMA) film, the high-resolution pixelated quantum dot emissive layer is formed. In addition, the leakage current of the device is significantly reduced because the direct contact between electron transport layer and hole transport layer is avoided. The PQLEDs based on nanoimprint technology show a resolution of 9072 pixels per inch (PPI), and a maximum external quantum efficiency (EQE) and brightness of 7.81% and 146 400 cd m(-2), respectively. The results demonstrate that high-resolution PQLEDs can be realized by using nanoimprint technology, holding great commercial potential for next-generation near-eye displays.
引用
收藏
页数:7
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