Characterization of Octyl Hydroxamic Acid as Inhibitor on Cu Chemical Mechanical Polishing

被引:3
|
作者
Xia, Rongyang [1 ,2 ]
Hu, Lianjun [3 ]
Cao, Jingwei [1 ,2 ]
Pan, Guofeng [1 ,2 ]
Qi, Yuhang [1 ,2 ]
机构
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin, Peoples R China
[2] Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China
[3] Tianjin Univ Commerce, Tianjin 300134, Peoples R China
关键词
Inhibitor; Chemical Mechanical Planarization; Density Functional Theory; DENSITY-FUNCTIONAL THEORY; CORROSION INHIBITION; COPPER CORROSION; LEAVES EXTRACT; ADSORPTION; CMP; DERIVATIVES; OXIDATION; CU(111); STEEL;
D O I
10.1149/2162-8777/acd722
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As an inhibitor for copper (Cu), Octyl hydroxamic acid (OHA) has been extensively studied through a combination of density functional theory (DFT) and experiments. Our findings indicate that using a concentration of 3 mM OHA as an inhibitor can lead to a remarkable removal rate (RR) and surface quality when the pH is at 10. Tafel analysis of potentiodynamic polarization plots was performed to demonstrate that OHA can lower the corrosion current. Further insight into the adsorption behavior of OHA on the Cu surface was obtained through a comprehensive study combining X-ray photoelectron spectroscopy (XPS), DFT calculations, and adsorption isotherm model analysis.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Local Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishing
    Kang, Min Cheol
    Kim, Yung Jun
    Koo, Hyo-Chol
    Cho, Sung Ki
    Kim, Jae Jeong
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (12) : H433 - H436
  • [42] Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor
    Prasad, Y. Nagendra
    Ramanathan, S.
    ELECTROCHIMICA ACTA, 2007, 52 (22) : 6353 - 6358
  • [43] Atomistic Mechanisms of Chemical Mechanical Polishing of a Cu Surface in Aqueous H2O2: Tight-Binding Quantum Chemical Molecular Dynamics Simulations
    Kawaguchi, Kentaro
    Ito, Hiroshi
    Kuwahara, Takuya
    Higuchi, Yuji
    Ozawa, Nobuki
    Kubo, Momoji
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (18) : 11830 - 11841
  • [44] Flotation of coarse and fine pyrochlore using octyl hydroxamic acid and sodium oleate
    Liu, Mingxia
    Li, Hao
    Jiang, Tao
    Liu, Qi
    MINERALS ENGINEERING, 2019, 132 : 191 - 201
  • [45] Effect of organic acids on copper chemical mechanical polishing
    Wu, Yung-Fu
    Tsai, Tzu-Hsuan
    MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2790 - 2798
  • [46] 1,2,4-Triazole as a corrosion inhibitor in copper chemical mechanical polishing
    Jiang, Liang
    Lan, Yongqing
    He, Yongyong
    Li, Yan
    Li, Yuzhuo
    Luo, Jianbin
    THIN SOLID FILMS, 2014, 556 : 395 - 404
  • [47] Activation Mechanism of Lead Ions in Perovskite Flotation with Octyl Hydroxamic Acid Collector
    Zheng, Yu
    Cui, Yating
    Wang, Weiqing
    MINERALS, 2018, 8 (08):
  • [48] Model-based control of chemical mechanical polishing
    Toprac, AJ
    PROCESS, EQUIPMENT, AND MATERIALS CONTROL IN INTEGRATED CIRCUIT MANUFACTURING III, 1997, 3213 : 101 - 107
  • [49] Effect of corrosion inhibitor, benzotriazole, in Cu slurry on Cu polishing
    Kim, In-Kwon
    Kang, Young-Jae
    Kim, Tae-Gon
    Park, Jin-Goo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 108 - 112
  • [50] Rational utilization of the size and electronic effect of inhibitors enabling high polishing rate with minimum corrosion in copper chemical mechanical polishing
    Chang, Pengfei
    Huang, Zisheng
    Chen, Yulong
    Ling, Huiqin
    Wu, Yunwen
    Li, Ming
    Shacham-Diamand, Yosi
    Hang, Tao
    APPLIED SURFACE SCIENCE, 2024, 674